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JANMQSMCGLCE18ATR

Description
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size726KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANMQSMCGLCE18ATR Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB

JANMQSMCGLCE18ATR Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Maximum breakdown voltage62.7 V
Minimum breakdown voltage56.7 V
Processing package descriptionPLASTIC PACKAGE-2
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipAVALANCHE
structuresingle
Diode component materialssilicon
Maximum power consumption limit5 W
polarityunidirectional
Diode typeTRANS voltage SUPPRESSOR diode
shutdown voltage51 V
Maximum non-repetitive peak speed power1500 W

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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