JANMQSMCJLCE130ATR datasheet, PDF

JANMQSMCJLCE130ATR: Description1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB; Categorysemiconductor Discrete semiconductor; File Size726KB，7 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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JANMQSMCJLCE130ATR Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Maximum breakdown voltage	62.7 V
Minimum breakdown voltage	56.7 V
Processing package description	PLASTIC PACKAGE-2
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Craftsmanship	AVALANCHE
structure	single
Diode component materials	silicon
Maximum power consumption limit	5 W
polarity	unidirectional
Diode type	TRANS voltage SUPPRESSOR diode
shutdown voltage	51 V
Maximum non-repetitive peak speed power	1500 W

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