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1N6474

Description
Zener Diodes T DAP UNI 1500W 30.5V
CategoryDiscrete semiconductor    diode   
File Size311KB,2 Pages
ManufacturerSEMTECH
Websitehttp://www.semtech.com
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1N6474 Overview

Zener Diodes T DAP UNI 1500W 30.5V

1N6474 Parametric

Parameter NameAttribute value
MakerSEMTECH
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time13 weeks
Is SamacsysN
Other featuresHIGH RELIABILITY
Minimum breakdown voltage33 V
Breakdown voltage nominal value33 V
Shell connectionISOLATED
Maximum clamping voltage47.5 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage31 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

1N6474 Related Products

1N6474 1N6470 1N6471 GUS-QS8B-021581-CF 1N6475
Description Zener Diodes T DAP UNI 1500W 30.5V Zener Diodes 1500 W UNIPOLAR TVS Zener Diodes 1500 W UNIPOLAR TVS Array/Network Resistor, Bussed, Tantalum Nitride/nickel Chrome, 0.05W, 1580ohm, 100V, 0.25% +/-Tol, -50,50ppm/Cel, 1915, Zener Diodes 1500 W UNIPOLAR TVS
Reach Compliance Code unknown unknown unknown compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Number of terminals 2 2 2 16 2
Maximum operating temperature 175 °C 175 °C 175 °C 125 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C -55 °C -65 °C
Package form LONG FORM LONG FORM LONG FORM SMT LONG FORM
technology AVALANCHE AVALANCHE AVALANCHE TANTALUM NITRIDE/NICKEL CHROME AVALANCHE
Maker SEMTECH SEMTECH SEMTECH - SEMTECH
package instruction O-LALF-W2 O-LALF-W2 O-LALF-W2 - O-LALF-W2
Contacts 2 2 2 - 2
Factory Lead Time 13 weeks 13 weeks 13 weeks - 13 weeks
Is Samacsys N N N - N
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY - HIGH RELIABILITY
Minimum breakdown voltage 33 V 6.5 V 13.6 V - 43.7 V
Breakdown voltage nominal value 33 V 6.5 V 13 V - 44 V
Shell connection ISOLATED ISOLATED ISOLATED - ISOLATED
Maximum clamping voltage 47.5 V 11 V 22.6 V - 63.5 V
Configuration SINGLE SINGLE SINGLE - SINGLE
Diode component materials SILICON SILICON SILICON - SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE - TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 - O-LALF-W2
Maximum non-repetitive peak reverse power dissipation 1500 W 1500 W 1500 W - 1500 W
Number of components 1 1 1 - 1
Package body material GLASS GLASS GLASS - GLASS
Package shape ROUND ROUND ROUND - ROUND
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL - UNIDIRECTIONAL
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified
Maximum repetitive peak reverse voltage 31 V 6 V 12 V - 40 V
surface mount NO NO NO - NO
Terminal form WIRE WIRE WIRE - WIRE
Terminal location AXIAL AXIAL AXIAL - AXIAL
Base Number Matches 1 1 1 - 1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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