Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 3 Pin, TO-24, 3 PIN
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Objectid | 1916729344 |
Parts packaging code | TO-33 |
package instruction | TO-24, 3 PIN |
Contacts | 4 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Samacsys Manufacturer | Microsemi Corporation |
Samacsys Modified On | 2022-10-21 16:20:48 |
Shell connection | COLLECTOR |
Maximum collector current (IC) | 5 A |
Collector-emitter maximum voltage | 80 V |
Configuration | DARLINGTON WITH BUILT-IN RESISTOR |
Minimum DC current gain (hFE) | 1000 |
JEDEC-95 code | TO-66 |
JESD-30 code | O-MBCY-W3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 200 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | NPN |
Certification status | Not Qualified |
Guideline | MIL-19500/472B |
surface mount | NO |
Terminal surface | TIN LEAD |
Terminal form | WIRE |
Terminal location | BOTTOM |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 50 MHz |