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JANTX2N6352

Description
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 3 Pin, TO-24, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size488KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANTX2N6352 Overview

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 3 Pin, TO-24, 3 PIN

JANTX2N6352 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1916729344
Parts packaging codeTO-33
package instructionTO-24, 3 PIN
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Samacsys ManufacturerMicrosemi Corporation
Samacsys Modified On2022-10-21 16:20:48
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)1000
JEDEC-95 codeTO-66
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineMIL-19500/472B
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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