4M x 8Bit x 4 Banks Sychronous DRAM
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | SAMSUNG |
| Parts packaging code | TSOP2 |
| package instruction | TSOP2, TSOP54,.46,32 |
| Contacts | 54 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| access mode | FOUR BANK PAGE BURST |
| Maximum access time | 6 ns |
| Other features | AUTO/SELF REFRESH |
| Maximum clock frequency (fCLK) | 100 MHz |
| I/O type | COMMON |
| interleaved burst length | 1,2,4,8 |
| JESD-30 code | R-PDSO-G54 |
| JESD-609 code | e0 |
| length | 22.22 mm |
| memory density | 134217728 bi |
| Memory IC Type | SYNCHRONOUS DRAM |
| memory width | 8 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 54 |
| word count | 16777216 words |
| character code | 16000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 16MX8 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TSOP2 |
| Encapsulate equivalent code | TSOP54,.46,32 |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE, THIN PROFILE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 3.3 V |
| Certification status | Not Qualified |
| refresh cycle | 4096 |
| Maximum seat height | 1.2 mm |
| self refresh | YES |
| Continuous burst length | 1,2,4,8,FP |
| Maximum standby current | 0.001 A |
| Maximum slew rate | 0.21 mA |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal pitch | 0.8 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 10.16 mm |
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