EEWORLDEEWORLDEEWORLD

Part Number

Search

KBJ2506

Description
25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size48KB,2 Pages
ManufacturerETC
Download Datasheet Compare View All

KBJ2506 Overview

25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

勝特力科技
886-3-5753170
百年電子
86-755-83289224
Http://www.100y.com.tw
SEP ELECTRONIC CORP.
KBJ25005 thru KBJ2510
25 A Single-Phase Silicon Bridge Rectifier
Rectifier Reverse Voltage 50 to 1000V
Features
This series is UL listed under the Recognized
Component Index, file number E142814
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High case dielectric strength of 1500V
RMS
Ideal for printed circuit boards
High surge current capability
2.5
+
0.2
30.0
+
0.3
20.0
+
0.3
4.6
+
0.2
3.6
+
0.2
3.2
+
0.2
20.0
+
0.3
3.5
+
0.2
+
~ ~ _
5
4
+
0.2
11.0
+
0.2
Mechanical Data
2.2
+
0.2
Case : Molded plastic body over passivated junctions
17.5
+
0.5
Terminals : Plated leads solderable per MIL-STD-750,
Method 2026
1.0
+
0.1
7.5
7.5
0.7
+
0.1
Polarity : Polarity symbols molded on body
10
+
0.2
+
0.2
+
0.2
2.7
Mounting Position : Any
(3)
Mounting Torque : 5 in-lbs max.
Weight : 0.26 ounce, 7.0 grams (approx)
Dimensions in millimeters(1mm =0.0394")
+
0.2
Maximum Ratings & Thermal Characteristics
Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz.
For Capacitive load derate current by 20%.
KBJ
KBJ
KBJ
KBJ
KBJ
KBJ
Parameter
Symbol
25005 2501 2502 2504 2506 2508
V
RRM
50
100
200
400
600
800
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
output current
V
RMS
V
DC
Tc =100 C I
F(AV)
I
FSM
I t
R
ejA
R
ejC
T
J
,
T
STG
2
KBJ
2510
Unit
1000 V
700
1000
V
V
A
A
A
sec
C/W
2
35
50
70
100
140
200
280
400
25
350
120
2.6
(2)
5
(1)
-55 to + 150
420
600
560
800
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
Rating for fusing ( t<8.3ms)
Maximum thermal resistance per leg
Operating junction and storage temperature
range
Electrical Characteristics
Rating at 25 C ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz.
For Capacitive load derate by 20 %.
KBJ
KBJ
KBJ
KBJ
KBJ
Parameter
Symbol
KBJ
25005 2501 2502 2504 2506 2508
Maximum instantaneous forward voltage drop
V
F
1.0
per leg at 12.5A
Maximum DC reverse current at
rated DC blocking voltage per leg
T
A
=25 C
T
A
=125 C
I
R
10
500
KBJ
Unit
2510
V
A
Notes:
(1)Unit case mounted on Al plate heatsink.
(2)Units mounted on P.C.B. with 0.5x0.5"(12x12mm) copper pads and 0.375"(9.5) lead length.
(3)Recommended mounting position is to bolt down on heat sink with silicone thermal compound for
maximum heat transfer with #6 screw.
2003 SEP ELECTRONIC CORP.
www.sep.net.cn
M099

KBJ2506 Related Products

KBJ2506 KBJ2502 KBJ2501 KBJ2503 KBJ2504 KBJ2505 KBJ2510 KBJ2508
Description 25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号