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KBP06

Description
2 A, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size133KB,2 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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KBP06 Overview

2 A, SILICON, BRIDGE RECTIFIER DIODE

CE
CHENYI ELECTRONICS
FEATURES
Ideal for printed circuit board
Surge overload rating: 60A peak
High case dielectric strength
KBP005 THRU KBP10
SINGLE PHASE GLASS
BRIDGE RECTIFIER
Voltage: 50 TO 1000V CURRENT:2.0A
MECHANICAL DATA
.
Terminal:
Plated leads solderable per
MIL-STD 202E, method 208C
.
Case:
UL-94 Class V-0 recognized Flame Retardant Epoxy
.
Polarity:
Polarity symbol marked on body
.
Mounting position:
any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60HZ, resistive or inductive load rating at 25
for capacitive load, derate current by 20%)
SYMBOL KBP005
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
current at Ta=50
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage at
forward current 2.0A DC
Maximum DC Reverse Voltage Ta=25
at rated DC blocking voltage Ta=100
Operating Temperature Range
Storage and operation Junction Temperature
Ir
Tj
Tstg
Vf
1.1
10.0
1.0
-55 to +125
-55 to +150
V
A
mA
Ifsm
50
A
If(av)
2.0
A
Vrrm
Vrms
Vdc
50
35
50
KBP01
100
70
100
KBP02
200
140
200
KBP04
400
280
400
KBP06
600
420
600
KBP08
800
560
800
KBP10
1000
700
1000
, unless otherwise stated,
units
v
v
v
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 2

KBP06 Related Products

KBP06 KBP10 KBP08 KBP04 KBP02 KBP01 KBP005
Description 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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