SILICON, VHF-UHF BAND, MIXER DIODE, GLASS PACKAGE-2
Parameter Name | Attribute value |
package instruction | O-LALF-W2 |
Contacts | 2 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Minimum breakdown voltage | 30 V |
Shell connection | ISOLATED |
Configuration | SINGLE |
Maximum diode capacitance | 1 pF |
Diode component materials | SILICON |
Diode type | MIXER DIODE |
Maximum forward voltage (VF) | 0.4 V |
frequency band | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
JESD-30 code | O-LALF-W2 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 200 °C |
Minimum operating temperature | -65 °C |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Maximum power dissipation | 0.25 W |
Certification status | Not Qualified |
Maximum reverse current | 0.3 µA |
surface mount | NO |
technology | SCHOTTKY |
Terminal form | WIRE |
Terminal location | AXIAL |
Base Number Matches | 1 |
1N5165 | 1N5166 | MA4E2305 | MA4E2301 | MA4E2302 | |
---|---|---|---|---|---|
Description | SILICON, VHF-UHF BAND, MIXER DIODE, GLASS PACKAGE-2 | SILICON, VHF-UHF BAND, MIXER DIODE, GLASS PACKAGE-2 | SILICON, VHF-UHF BAND, MIXER DIODE, GLASS PACKAGE-2 | SILICON, VHF-UHF BAND, MIXER DIODE, GLASS PACKAGE-2 | SILICON, VHF-UHF BAND, MIXER DIODE, GLASS PACKAGE-2 |
package instruction | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
Contacts | 2 | 2 | 2 | 2 | 2 |
Reach Compliance Code | unknow | unknow | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Minimum breakdown voltage | 30 V | 30 V | 30 V | 30 V | 30 V |
Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Maximum diode capacitance | 1 pF | 1 pF | 1 pF | 1 pF | 1 pF |
Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
Diode type | MIXER DIODE | MIXER DIODE | MIXER DIODE | MIXER DIODE | MIXER DIODE |
Maximum forward voltage (VF) | 0.4 V | 0.4 V | 0.4 V | 0.4 V | 0.4 V |
frequency band | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
Number of components | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 | 2 |
Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C |
Minimum operating temperature | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C |
Package body material | GLASS | GLASS | GLASS | GLASS | GLASS |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
Maximum power dissipation | 0.25 W | 0.25 W | 0.25 W | 0.25 W | 0.25 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum reverse current | 0.3 µA | 0.2 µA | 0.3 µA | 0.3 µA | 0.2 µA |
surface mount | NO | NO | NO | NO | NO |
technology | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY |
Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE |
Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |