Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2003 Hamamatsu Photonics K.K.
1
1.2
nm
nm
V
50
X
1
8
32
0.35
A
0.6
L8933-04 , L8446-04 , L8763-04
L8933-41 , L8446-41 , L8763-41
L8933-42 , L8446-42 , L8763-42
degree
degree
100
X
1
2.4
A
2
W
LD Chip
φ
2.8
±
0.3
08
±
5 , 808
±
10
*
1
2
2
1
µ
m
φ
0.45
φ
2.54
1.0
0.4
Anode
(Case)
1.5
2.4
7.0
±
0.5 5.1
±
0.5
(Connection)
laser diodes listed above. For its details, see the
t your local representative for more information.
Cathode
NC
on Spectrum (Typ.)
( T
op(c)
= 25
°C
)
Anode
Cathode
2
Output
LD Chip
1
Side-out OHS Package
10
Cathode Lead
1.8
2.4
5.8
1.5 0.15
(Connection)
3.8
8.8
06
810
812
Wavelength (nm)
808
L8933-06 , L8446-06 , L8763-06 , L8828-06
L8933-61 , L8446-61 , L8763-61 , L8828-61
L8933-62 , L8446-62 , L8763-62 , L8828-62
7.8
9.45
9.4
φ
3
6
Isolator
Anode
Cathode
Anode Block
Head-out OHS Package
0.6
Isolator
2.0
0.15
5.0
LD Chip
2.0
2.0
1.0
Output
2.4
(Connection)
1.0
Cathode Lead
L8933-07 , L8446-07 , L8763-07 , L8828-07
L8933-71 , L8446-71 , L8763-71 , L8828-71
L8933-72 , L8446-72 , L8763-72 , L8828-72
Anode Block
φ
2.2
5.0
8.0
Anode
Cathode
6.0
1
1.2
nm
nm
V
50
X
1
8
32
0.35
A
0.6
L8933-04 , L8446-04 , L8763-04
L8933-41 , L8446-41 , L8763-41
L8933-42 , L8446-42 , L8763-42
degree
degree
100
X
1
2.4
A
2
W
LD Chip
φ
2.8
±
0.3
08
±
5 , 808
±
10
*
1
2
2
1
µ
m
φ
0.45
φ
2.54
1.0
0.4
Anode
(Case)
1.5
2.4
7.0
±
0.5 5.1
±
0.5
(Connection)
laser diodes listed above. For its details, see the
t your local representative for more information.
Cathode
NC
on Spectrum (Typ.)
( T
op(c)
= 25
°C
)
Anode
Cathode
2
Output
LD Chip
1
Side-out OHS Package
10
Cathode Lead
1.8
2.4
5.8
1.5 0.15
(Connection)
3.8
8.8
06
810
812
Wavelength (nm)
808
L8933-06 , L8446-06 , L8763-06 , L8828-06
L8933-61 , L8446-61 , L8763-61 , L8828-61
L8933-62 , L8446-62 , L8763-62 , L8828-62
7.8
9.45
9.4
φ
3
6
Isolator
Anode
Cathode
Anode Block
Head-out OHS Package
0.6
Isolator
2.0
0.15
5.0
LD Chip
2.0
2.0
1.0
Output
2.4
(Connection)
1.0
Cathode Lead
L8933-07 , L8446-07 , L8763-07 , L8828-07
L8933-71 , L8446-71 , L8763-71 , L8828-71
L8933-72 , L8446-72 , L8763-72 , L8828-72
Anode Block
φ
2.2
5.0
8.0
Anode
Cathode
6.0
ly, measuring instrument etc.
m soldering iron bit.
he work table and the floor of the working
erator s clothes, ground electrically through
n a countermeasures for ESD.
piration, finger print, sputum, condensation
of the LDs. Please unpack, keep, handle,
ondensation. When handling, please take
High optical power & high radiant flux
density(CW)
L8933 series : 0.5 W / 50
µ
m
L8446 series : 1 W / 100
µ
m
L8763 series : 1 W / 50
µ
m
L8828 series : 2 W / 100
µ
m
High stability
Long life
Compact
perature, the reliability deteriorates sooner.
and cooling devices (air, water, peltier etc.)
ing temperature is kept within the absolute
APPLICATIONS
Pumping source for solid state lasers
Printing
Medical instrument
Measuring instrument
Material Processing
Marking
oduct standards of the IEC 60825-1 (Safety
SI Z136.1 (American National Standard for
or skin by being absorbed by cells. In the
a of LDs, must avoid direct exposure to the
ating a device. Please provide adequate
using these LDs, defying the regulations of
HAMAMATSU CW laser diodes, L8933, L8446, L8763, L8828 series feature high optical power of 0.5 to 2.0 W
under CW operation. As this is single chip and single element type, emitting area is small (50
µ
m to 100
µ
m X 1
µ
m). Therefore, it is easy to focus on to a small spot with optics. It can be used for various applications such as
pumping of solid lasers, printers, medical instruments etc.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2003 Hamamatsu Photonics K.K.
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