OBSOLETE
Polar
TM
HiPerFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
1.6mm (0.062 in.) from case for 10s
50/60Hz, RMS
I
ISOL
≤
1mA
t = 1min
t = 1s
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
1100
1100
±30
±40
36
110
18
2
20
1000
-55 ... +150
150
-55 ... +150
300
2500
3000
1.5/13
1.3/ 11.5
30
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
G = Gate
S = Source
S
D
D = Drain
IXFN36N110P
V
DSS
=
I
D25
=
R
DS(on)
≤
≤
t
rr
1100V
36A
240mΩ
Ω
300ns
miniBLOC, SOT-227
E153432
S
G
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
•
International standard package
•
Encapsulating epoxy meets
UL 94 V-0, flammability classification
•
miniBLOC with Aluminium nitride
Mounting torque
Terminal connection torque
isolation
•
Fast recovery diode
•
Unclamped Inductive Switching (UIS)
rated
•
Low package inductance
- easy to drive and to protect
Advantages
•
Easy to mount
•
Space savings
•
High power density
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±30V,
V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
1100
3.5
6.5
±300
50
4
240
V
V
nA
μA
mA
mΩ
Applications:
High Voltage Switched-mode and
resonant-mode power supplies
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2011 IXYS Corporation, All rights reserved
DS99902OBS (05/11)
OBSOLETE
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
g
fs
C
iss
C
oss
C
rss
R
Gi
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.05
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Gate input resistance
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
20
32
23
1240
110
0.85
60
54
94
45
350
117
157
S
nF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
0.125
°C/W
°C/W
IXFN36N110P
SOT-227B Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 20A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
Characteristic Values
Min.
Typ.
Max.
36
144
1.5
300
2.3
16
A
A
V
ns
μC
A
Note
1.
Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
OBSOLETE
Fig. 1. Output Characteristics
@ 25ºC
40
35
30
V
GS
= 10V
7V
90
80
70
60
IXFN36N110P
Fig. 2. Extended Output Characteristics
@ 25ºC
V
GS
= 10V
8V
I
D
- Amperes
I
D
- Amperes
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
5V
6V
7V
50
40
30
20
10
0
0
5
10
15
20
25
30
5V
6V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics
@ 125ºC
40
35
30
V
GS
= 10V
8V
3.0
2.8
2.6
Fig. 4. R
DS(on)
Normalized to I
D
= 18A Value
vs. Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
D
= 36A
I
D
= 18A
I
D
- Amperes
25
20
15
7V
6V
10
5
0
0
2
4
6
8
10
12
14
16
18
20
5V
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 18A Value
vs. Drain Current
2.6
2.4
2.2
V
GS
= 10V
T
J
= 125ºC
40
35
30
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
I
D
- Amperes
T
J
= 25ºC
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
10
20
30
40
50
60
70
80
90
25
20
15
10
5
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2011 IXYS Corporation, All rights reserved
OBSOLETE
Fig. 7. Input Admittance
65
60
55
50
T
J
= 125ºC
25ºC
- 40ºC
70
60
80
IXFN36N110P
Fig. 8. Transconductance
T
J
= - 40ºC
g
f s
- Siemens
45
I
D
- Amperes
40
35
30
25
20
15
10
5
0
4.0
4.5
5.0
5.5
50
40
30
20
10
0
25ºC
125ºC
6.0
6.5
7.0
7.5
8.0
8.5
0
10
20
30
40
50
60
70
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
100
90
80
12
70
16
14
V
DS
= 550V
I
D
= 18A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
60
50
40
30
20
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
T
J
= 125ºC
V
GS
- Volts
T
J
= 25ºC
10
8
6
4
2
0
0
50
100
150
200
250
300
350
400
450
500
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1.000
Fig. 12. Maximum Transient Thermal
Impedance
Capacitance - PicoFarads
10,000
Ciss
1,000
Coss
Z
(th)JC
- ºC / W
35
40
0.100
0.010
100
f
= 1 MHz
10
0
5
10
15
20
25
30
Crss
0.001
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_36N110P(99) 04-01-08-A
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