TN0702N3-G-P013 datasheet, PDF

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TN0702N3-G-P013: DescriptionMOSFET N-CH Enhancmnt Mode MOSFET; Categorysemiconductor Discrete semiconductor; File Size582KB，5 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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TN0702N3-G-P013 Overview

MOSFET N-CH Enhancmnt Mode MOSFET

TN0702N3-G-P013 Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Microchip
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-92-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	530 mA
Rds On - Drain-Source Resistance	5 Ohms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Channel Mode	Enhancement
Packaging	Reel
Height	5.33 mm
Length	5.21 mm
Product	MOSFET Small Signal
Transistor Type	1 N-Channel
Width	4.19 mm
Fall Time	20 ns
Pd - Power Dissipation	1 W
Rise Time	20 ns
Factory Pack Quantity	2000
Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	20 ns
Unit Weight	0.016000 oz

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Supertex inc.

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

►

Low threshold - 1.6V max.

High input impedance

Low input capacitance - 130pF typical

Fast switching speeds

Low on-resistance guaranteed at V

= 2, 3, and 5V

Free from secondary breakdown

Low input and output leakage

TN0702

General Description

Applications

►

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input impedance

and positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Ordering Information

Part Number

TN0702N3-G

TN0702N3-G P002

TN0702N3-G P003

TN0702N3-G P005

TN0702N3-G P013

TN0702N3-G P014

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

Product Summary

Packing

1000/Bag

DSS

/BV

DGS

20V

DS(ON)

(max)

Package Option

TO-92

D(ON)

(min)

GS(th)

(max)

1.3Ω

0.5A

1.0V

TO-92

2000/Reel

Pin Configuration

DRAIN

SOURCE

Absolute Maximum Ratings

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Value

DSS

DGS

±20V

-55

C to +150

GATE

TO-92

Product Marking

SiTN

0 70 2

YYWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

TO-92

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Typical Thermal Resistance

Package

TO-92

Doc.# DSFP-TN0702

C080813

Package may or may not include the following marks: Si or

132

C/W

Supertex inc.

www.supertex.com

TN0702N3-G-P013 Related Products

	TN0702N3-G-P013	TN0702N3	TN0702N3-G-P003
Description	MOSFET N-CH Enhancmnt Mode MOSFET	MOSFET 20V 1.3Ohm	MOSFET N-CH Enhancmnt Mode MOSFET
Product Attribute	Attribute Value	Attribute Value	Attribute Value
Manufacturer	Microchip	Microchip	Microchip
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Details	N	Details
Technology	Si	Si	Si
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3	TO-92-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	20 V	20 V	20 V
Id - Continuous Drain Current	530 mA	530 mA	530 mA
Rds On - Drain-Source Resistance	5 Ohms	1.3 Ohms	5 Ohms
Vgs - Gate-Source Voltage	20 V	20 V	20 V
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Packaging	Reel	-	Reel
Height	5.33 mm	5.33 mm	5.33 mm
Length	5.21 mm	5.21 mm	5.21 mm
Product	MOSFET Small Signal	MOSFET Small Signal	MOSFET Small Signal
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Width	4.19 mm	4.19 mm	4.19 mm
Fall Time	20 ns	20 ns	20 ns
Pd - Power Dissipation	1 W	1 W	1 W
Rise Time	20 ns	20 ns	20 ns
Factory Pack Quantity	2000	1000	2000
Typical Turn-Off Delay Time	30 ns	30 ns	30 ns
Typical Turn-On Delay Time	20 ns	20 ns	20 ns
Unit Weight	0.016000 oz	0.016000 oz	0.016000 oz

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