Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
| Parameter Name | Attribute value |
| Parts packaging code | TO-204AA |
| package instruction | FLANGE MOUNT, O-MBFM-P2 |
| Contacts | 2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 8 A |
| Collector-emitter maximum voltage | 60 V |
| Configuration | DARLINGTON |
| Minimum DC current gain (hFE) | 750 |
| JEDEC-95 code | TO-3 |
| JESD-30 code | O-MBFM-P2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 100 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 4 MHz |
| Base Number Matches | 1 |
| 2N6055 | 2N6282 | MJ3000 | MJ1000 | |
|---|---|---|---|---|
| Description | Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN |
| Parts packaging code | TO-204AA | TO-204AA | TO-204AA | TO-204AA |
| package instruction | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 |
| Contacts | 2 | 2 | 2 | 2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 8 A | 20 A | 10 A | 8 A |
| Collector-emitter maximum voltage | 60 V | 60 V | 60 V | 60 V |
| Configuration | DARLINGTON | DARLINGTON | SINGLE | DARLINGTON |
| Minimum DC current gain (hFE) | 750 | 750 | 1000 | 750 |
| JEDEC-95 code | TO-3 | TO-3 | TO-3 | TO-3 |
| JESD-30 code | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C |
| Package body material | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 100 W | 160 W | 150 W | 90 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 4 MHz | 4 MHz | 1 MHz | - |
| Base Number Matches | 1 | 1 | 1 | - |
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