SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
2SC1623
NPN EPITAXIAL SILICON TRANSISTO
R
Package:
SOT-23
TECHNICAL DATA
AUDIO FREQUENCY GENERAL
PURPOSE AMPLIFIER
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
Rating
60
50
5
100
200
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
PIN:
STYLE
NO.1
1
2
3
B
E
C
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Base Capacitance
Current Gain-Bandwidth Product
Symbol
BVcbo
BVceo
BVebo
Icbo
Iebo
Hfe
Vce(sat)
Vbe(sat)
Vbe
Cob
f
T
0.55
90
200
0.15
0.86
0.62
3
250
Min
60
50
5
100
100
600
0.3
1
0.65
V
V
V
PF
MHz
Typ
Max
Unit
V
V
V
nA
nA
Test Conditions
Ic= 100uA
Ie=0
Ic= 1mA Ib=0
Ie= 100uA
Vcb= 60V
Veb=5V
Ic=0
Ie=0
Ic= 0
Vce= 6V Ic= 1mA
Ic= 100mA
Ic=100mA
Ib= 10mA
Ib=10mA
Ic=1mA Vce=6V
Vcb= 6V Ie=0 f=1MHZ
Vce= 6V Ic= 10mA
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test : Pulse Width
≤300uS,Duty
cycle
≤2%
h
FE
Classification
Marking
h
FE
L3
60-90
L4
90—180
L5
135—270
L6
200—400
L7
300—600
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
２ＳＣ１６２３
TECHNICAL DATA
NPN EPITAXIAL SILICON TRANSISTO
R
Fig. 1 P
C
–T
a
Fig. 2 I
C
-V
BE
5
Fig. 3 I
C
-V
CE
Fig. 4 h
FE
-I
C
Fig. 5 V
CE(sat)
-I
C
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