DCR1376SBA
DCR1376SBA
Phase Control Thyristor
Advance Information
Replaces October 2000 version, DS4598 -5.0
DS4598-6.0 July 2001
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
Low Turn-on Losses
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dVdt
dI/dt
3600V
1690A
25000A
1000V/
µ
s
300A/
µ
s
APPLICATIONS
s
High Voltage Power Converters
s
High Voltage Power Supplies
s
Motor Control
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
3600
3400
3200
3000
2800
Conditions
DCR1376SBA36
DCR1376SBA34
DCR1376SBA32
DCR1376SBA30
DCR1376SBA28
T
vj
= 0˚ to 125˚C,
I
DRM
= I
RRM
= 150mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available.
Outline type code: MU140.
See Package Details for further information.
Fig.1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1376SBA34
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DCR1376SBA
CURRENT RATINGS
T
case
= 60˚C unless stated otherwise.
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1690
2655
2440
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1270
1990
1740
A
A
A
CURRENT RATINGS
T
case
= 80˚C unless stated otherwise.
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1335
2095
1890
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
990
1550
1340
A
A
A
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DCR1376SBA
SURGE RATINGS
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
20
2.0 x 10
6
25
3.12 x 10
6
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 40kN
with mounting compound
On-state (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
-55
36.0
125
125
44.0
o
Min.
dc
Anode dc
-
-
-
-
-
-
Max.
0.013
0.021
0.034
0.003
0.006
135
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
Double side
Single side
o
R
th(c-h)
Thermal resistance - case to heatsink
o
C
C
C
o
kN
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DCR1376SBA
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
Parameter
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Conditions
At V
RRM
/V
DRM
, T
case
= 125
o
C
To 67% V
DRM
T
j
= 125
o
C.
From 67% V
DRM
to 2800A
Gate source 20V, 20Ω
t
r
≤
1.0µs. T
j
= 125
o
C.
At T
vj
= 125
o
C
At T
vj
= 125
o
C
V
D
= 67% V
DRM
, Gate source 30V, 15Ω
Rise time 0.5µs, T
j
= 25
o
C
Repetitive 50Hz
Non-repetitive
Typ.
-
-
-
-
-
-
-
Max.
150
1000
150
300
1.1
0.39
1.5
Units
mA
V/µs
A/µs
A/µs
V
mΩ
ns
dI/dt
Rate of rise of on-state current
V
T(TO)
r
T
t
gd
Threshold voltage
On-state slope resistance
Delay time
I
T
= 800A, t
p
= 1ms, T
j
= 125˚C,
t
q
Turn-off time
V
R
= 50V, dI
RR
/dt = 20A/µs,
V
DR
= 67% V
DRM
, dV
DR
/dt = 20V/µs linear
T
j
= 25
o
C, V
D
= 5V
T
j
= 25
o
C, V
G-K
=
∞
550
-
µs
I
L
I
H
Latching current
Holding current
-
-
400
200
mA
mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Anode positive with respect to cathode
See table Fig.5
Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
Max.
3.0
350
0.25
30
0.25
5
10
150
10
Units
V
mA
V
V
V
V
A
W
W
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DCR1376SBA
CURVES
8000
Measured under pulse conditions
T
j
= 125˚C
7000
5000
4000
Instantaneous on-state current, I
T
- (A)
6000
Mean power dissipation - (W)
5000
3000
4000
3000
2000
2000
1000
1000
d.c.
Half wave
3 phase
6 phase
2.0
3.0
Instantaneous on-state voltage, V
T
- (V)
4.0
0
1.0
0
0
500
1000
1500
2000
Mean on-state current, I
T(AV)
- (A)
2500
Fig.2 Maximum (limit) on-state characteristics
V
TM
Equation:-
V
TM
= A + Bln (I
T
) + C.I
T
+D.√I
T
Where
A = 1.459103
B = –0.07503561
C = 3.442677 x 10
–4
D = 7.82981 x 10
–3
these values are valid for T
j
= 125˚C for I
T
500A to 8000A
Fig.3 Dissipation curves
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