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5962-3826703MTA

Description
EEPROM, 128KX8, 200ns, Parallel, CMOS, CPGA30, CERAMIC, PGA-30
Categorystorage    storage   
File Size328KB,11 Pages
Manufacturere2v technologies
Download Datasheet Parametric View All

5962-3826703MTA Overview

EEPROM, 128KX8, 200ns, Parallel, CMOS, CPGA30, CERAMIC, PGA-30

5962-3826703MTA Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codePGA
package instructionPGA,
Contacts30
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time200 ns
Other featuresAUTOMATIC WRITE
JESD-30 codeR-CPGA-P30
JESD-609 codee0
length16.51 mm
memory density1048576 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals30
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codePGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage5 V
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height3.9878 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal pitch2.54 mm
Terminal locationPERPENDICULAR
Maximum time at peak reflow temperatureNOT SPECIFIED
width13.97 mm
Maximum write cycle time (tWC)10 ms
Base Number Matches1

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