J112 datasheet, PDF - EEWORLD Datasheet

J112: DescriptionN-CHANNEL, Si, SMALL SIGNAL, JFET; CategoryDiscrete semiconductor The transistor; File Size47KB，1 Pages; ManufacturerMicro Electronics; Websitehttp://www.microelectr.com.hk

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N-CHANNEL, Si, SMALL SIGNAL, JFET

Parameter Name	Attribute value
Maker	Micro Electronics
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-W3
Contacts	3
Reach Compliance Code	unknow
Configuration	SINGLE
Maximum drain-source on-resistance	50 Ω
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	5 pF
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.4 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

	J112	J113	J111
Description	N-CHANNEL, Si, SMALL SIGNAL, JFET	N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS
Maker	Micro Electronics	Micro Electronics	Micro Electronics
Parts packaging code	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3
Contacts	3	3	3
Reach Compliance Code	unknow	unknow	unknown
Configuration	SINGLE	SINGLE	SINGLE
Maximum drain-source on-resistance	50 Ω	100 Ω	30 Ω
FET technology	JUNCTION	JUNCTION	JUNCTION
Maximum feedback capacitance (Crss)	5 pF	5 pF	5 pF
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.4 W	0.4 W	0.4 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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