BZX55 Series
Vishay Semiconductors
formerly General Semiconductor
Zener Diodes
V
Z
Range
0.8, 2.4 to 100V
Power Dissipation
500mW
DO-204AH (DO-35 Glass)
ge
lta
Vo
ed e
end ang
xt R
E
Features
• Silicon Planar Power Zener Diodes.
• The Zener voltages are graded according to the
international E 24 standard. Standard Zener
voltage tolerance is ±5%. Replace suffix “C” with
“B” for ±2% tolerance. Other voltage tolerances and
other Zener voltages are available upon request.
Mechanical Data
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
Packaging Codes/Options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics
Parameter
Zener Current (see Table “Characteristics”)
Power Dissipation at T
amb
= 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
P
tot
R
θJA
T
j
T
S
Symbol
(T
A
= 25°C unless otherwise noted)
Value
500
(1)
300
(1)
175
–55 to +175
Unit
mW
°C/W
°C
°C
Note:
(1) Valid provided that leads at a distance of 3/8” from case are kept at ambient temperature.
Document Number 88319
26-Apr-02
www.vishay.com
1
BZX55 Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Type
y = C for 5%
y = B for 2%
BZX55 – y0V8
(3)
BZX55 – y2V4
BZX55 – y2V7
BZX55 – y3V0
BZX55 – y3V3
BZX55 – y3V6
BZX55 – y3V9
BZX55 – y4V3
BZX55 – y4V7
BZX55 – y5V1
BZX55 – y5V6
BZX55 – y6V2
BZX55 – y6V8
BZX55 – y7V5
BZX55 – y8V2
BZX55 – y9V1
BZX55 – y10
BZX55 – y11
BZX55 – y12
BZX55 – y13
BZX55 – y15
BZX55 – y16
BZX55 – y18
BZX55 – y20
BZX55 – y22
BZX55 – y24
BZX55 – y27
BZX55 – y30
BZX55 – y33
BZX55 – y36
BZX55 – y39
BZX55 – y43
BZX55 – y47
BZX55 – y51
BZX55 – y56
BZX55 – y62
BZX55 – y68
BZX55 – y75
BZX55 - y82
BZX55 - y91
BZX55 - y100
(T
A
= 25°C unless otherwise noted)
Maximum V
F
= 1.0 V at I
F
= 100 mA
Dynamic resistance
at I
Z
= 5 mA at I
Z
= 1mA
f = 1 kHz
f = 1 kHz
rzj (Ω)
rzj (Ω)
<8
< 85
< 85
< 85
< 85
< 85
< 85
< 75
< 60
< 35
< 25
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
(4)
Temp. coefficient of Zener
Voltage at I
Z
= 5 mA
α
vz (%/°C)
min
max
– 0.25
– 0.08
– 0.08
– 0.08
– 0.08
– 0.08
– 0.07
– 0.04
– 0.03
– 0.02
– 0.01
0
+0.01
+0.01
+0.01
+0.02
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
typ. +0.1
typ. +0.1
typ. +0.1
typ. +0.1
typ. +0.1
typ. +0.1
–
– 0.06
– 0.06
– 0.06
– 0.05
– 0.04
– 0.03
– 0.01
+0.01
+0.05
+0.06
+0.07
+0.08
+0.09
+0.09
+0.10
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
(4)
(4)
(4)
(4)
(4)
Reverse leakage current
at
at
at
T
amb
= 25°C T
amb
= 150°C
V
R
(V)
I
R
(µA)
I
R
(nA)
–
< 50000
< 10000
< 4000
< 2000
< 2000
< 2000
< 1000
< 500
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
–
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 10
–
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
Admissible
Zener
current
(2)
I
ZM
(mA)
–
145
135
125
115
105
95
90
85
80
70
64
58
53
47
43
40
36
32
29
27
24
21
20
18
16
14
13
12
11
10
9.2
8.5
7.8
7.0
6.4
5.9
5.3
4.8
4.4
4.0
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
(5)
(5)
(5)
(5)
(5)
(5)
(5)
(5)
(5)
< 110
< 125
< 135
< 150
< 200
< 250
< 1000
< 1000
< 1000
< 1500
< 2000
< 5000
< 300
< 450
< 450
(6)
(6)
< 5000
(7)
(7)
typ. +0.1
(4)
(4)
Notes:
(1) Tested with pulses t
p
= 5 ms
(2) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
(3) The BZX55–C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be “F” instead of “Z”.
Connect the cathode lead to the negative pole.
(4) at I
Z
= 2.5 mA
(5) at I
Z
= 0.5 mA
(6) at Iz = 1.0 mA
(7) at Iz = 0.1 mA
www.vishay.com
2
Document Number 88319
26-Apr-02
BZX55 Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Type
± 5% Tol.
BZX55-C0V8
(3)
BZX55-C2V4
BZX55-C2V7
BZX55-C3V0
BZX55-C3V3
BZX55-C3V6
BZX55-C3V9
BZX55-C4V3
BZX55-C4V7
BZX55-C5V1
BZX55-C5V6
BZX55-C6V2
BZX55-C6V8
BZX55-C7V5
BZX55-C8V2
BZX55-C9V1
BZX55-C10
BZX55-C11
BZX55-C12
BZX55-C13
BZX55-C15
BZX55-C16
BZX55-C18
BZX55-C20
BZX55-C22
BZX55-C24
BZX55-C27
BZX55-C30
BZX55-C33
BZX55-C36
BZX55-C39
BZX55-C43
BZX55-C47
BZX55-C51
BZX55-C56
BZX55-C62
BZX55-C68
BZX55-C75
BZX55-C82
BZX55-C91
BZX55-C100
Zener Voltage
range
(1)
at I
ZT1
V
Z
(V)
min.
max.
0.73
2.28
2.50
2.80
3.10
3.40
3.70
4.00
4.40
4.80
5.20
5.80
6.40
7.00
7.70
8.50
9.40
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
77.0
85.0
94.0
0.83
2.56
2.90
3.20
3.50
3.90
4.10
4.60
5.00
5.40
6.00
6.60
7.20
7.90
8.70
9.60
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
80.0
87.0
96.0
106
(T
A
= 25°C unless otherwise noted)
Maximum V
F
= 1.0V at I
F
= 100 mA
Test Current
I
ZT1
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1.0
1.0
Type
± 2% Tol.
BZX55-B0V8
(3)
BZX55-B2V7
BZX55-B3
BZX55-B3V0
BZX55-B3V3
BZX55-B3V6
BZX55-B3V9
BZX55-B4V3
BZX55-B4V7
BZX55-B5V1
BZX55-B5V6
BZX55-B6V2
BZX55-B6V8
BZX55-B7V5
BZX55-B8V2
BZX55-B9V1
BZX55-B10
BZX55-B11
BZX55-B12
BZX55-B13
BZX55-B15
BZX55-B16
BZX55-B18
BZX55-B20
BZX55-B22
BZX55-B24
BZX55-B27
BZX55-B30
BZX55-B33
BZX55-B36
BZX55-B39
BZX55-B43
BZX55-B47
BZX55-B51
BZX55-B56
BZX55-B62
BZX55-B68
BZX55-B75
BZX55-B82
BZX55-B91
BZX55-B100
Zener Voltage
range
(1)
at I
ZT1
V
Z
(V)
min.
max.
0.78
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50.0
54.9
60.8
66.6
73.5
80.4
89.2
98.0
0.82
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52.0
57.1
63.2
69.4
76.5
83.6
92.8
102
Test Current
I
ZT1
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1.0
1.0
Notes:
(1) Measured with pulses t
p
= 5 ms
(3) The BZX55–C0V8 is a silicon diode with operation in forward
direction. Hence, the index of all parameters should be “F”
instead of “Z”. Connect the cathode lead to the negative pole.
Document Number 88319
26-Apr-02
www.vishay.com
3
BZX55 Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
www.vishay.com
4
Document Number 88319
26-Apr-02
BZX55 Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Document Number 88319
26-Apr-02
www.vishay.com
5
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