Transistors
2SD2623
Silicon NPN epitaxial planar type
For low-frequency amplification
Unit: mm
(0.425)
■
Features
•
Low ON resistance R
on
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
0.3
+0.1
–0.0
3
0.15
+0.10
–0.05
1.25
±0.10
2.1
±0.1
5˚
1
2
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
25
20
12
0.5
1
150
150
−55
to
+150
Unit
V
V
V
A
A
mW
°C
°C
10˚
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
0.9
±0.1
0.9
+0.2
–0.1
1 : Base
2 : Emitter
3 : Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 2V
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1, 2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistanse
*3
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
25 V, I
E
=
0
V
CE
= 2 V, I
C
= 0.5 A
I
C
=
0.5 A, I
B
=
20 mA
I
C
=
0.5 A, I
B
=
50 mA
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
25
20
12
0 to 0.1
Typ
Max
Unit
V
V
V
100
200
0.14
800
0.40
1.2
200
10
1.0
nA
V
V
MHz
pF
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
*3: R
on
Measuremet circuit
Rank
h
FE
R
200 to 350
S
300 to 500
T
400 to 800
I
B
=
1 mA
1 kΩ
f
=
1 kHz
V
=
0.3 V
V
B
V
V
V
A
R
on
=
V
B
×
1 000 (Ω)
V
A
−
V
B
0.2
±0.1
Publication date: February 2003
SJC00284BED
1
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and semiconductors described in this material
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•
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•
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