IRF7526D1 datasheet, PDF - EEWORLD Datasheet

IRF7526D1: DescriptionFETKY⑩ MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V); CategoryDiscrete semiconductor The transistor; File Size122KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRF7526D1 Overview

FETKY⑩ MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	1 A
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
JESD-609 code	e0
Humidity sensitivity level	2
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.42 W
Maximum pulsed drain current (IDM)	16 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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