IRF443 datasheet, PDF - EEWORLD Datasheet

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IRF443: Description8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size152KB，5 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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IRF443 Overview

8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF443 Parametric

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	500 V
state	TRANSFERRED
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
terminal coating	tin lead
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	DRAIN
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	8 A
Maximum drain on-resistance	0.8500 ohm
Maximum leakage current pulse	32 A

IRF443 Related Products

	IRF443	MTM7N50	MTM7N45	IRF440	IRF440-443	IRF441	IRF442	IRF842	IRF841	IRF843
Description	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	8 A, 500 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of terminals	3	3	3	-	3	3	3	-	3	3
Minimum breakdown voltage	500 V	500 V	500 V	-	500 V	500 V	500 V	-	-	500 V
state	TRANSFERRED	TRANSFERRED	TRANSFERRED	-	TRANSFERRED	TRANSFERRED	TRANSFERRED	-	-	TRANSFERRED
packaging shape	Rectangle	Rectangle	Rectangle	-	Rectangle	Rectangle	Rectangle	-	-	Rectangle
Package Size	Flange mounting	Flange mounting	Flange mounting	-	Flange mounting	Flange mounting	Flange mounting	-	-	Flange mounting
Terminal form	THROUGH-hole	THROUGH-hole	THROUGH-hole	-	THROUGH-hole	THROUGH-hole	THROUGH-hole	-	THROUGH-HOLE	THROUGH-hole
terminal coating	tin lead	tin lead	tin lead	-	tin lead	tin lead	tin lead	-	-	tin lead
Terminal location	single	single	single	-	single	single	single	-	SINGLE	single
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	-	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	-	-	Plastic/Epoxy
structure	single	single	single	-	single	single	single	-	-	single
Shell connection	DRAIN	DRAIN	DRAIN	-	DRAIN	DRAIN	DRAIN	-	-	DRAIN
Number of components	1	1	1	-	1	1	1	-	1	1
transistor applications	switch	switch	switch	-	switch	switch	switch	-	SWITCHING	switch
Transistor component materials	silicon	silicon	silicon	-	silicon	silicon	silicon	-	SILICON	silicon
Channel type	N channel	N channel	N channel	-	N channel	N channel	N channel	-	-	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	-	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	-	-	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	-	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	-	-	ENHANCEMENT
Transistor type	universal power supply	universal power supply	universal power supply	-	universal power supply	universal power supply	universal power supply	-	-	universal power supply
Maximum leakage current	8 A	8 A	8 A	-	8 A	8 A	8 A	-	-	8 A
Maximum drain on-resistance	0.8500 ohm	0.8500 ohm	0.8500 ohm	-	0.8500 ohm	0.8500 ohm	0.8500 ohm	-	-	0.8500 ohm
Maximum leakage current pulse	32 A	32 A	32 A	-	32 A	32 A	32 A	-	-	32 A

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