IRF343 datasheet, PDF - EEWORLD Datasheet

IRF343: DescriptionPOWER, FET; CategoryDiscrete semiconductor The transistor; File Size214KB，5 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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IRF343 Overview

POWER, FET

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	,
Reach Compliance Code	unknow
Configuration	Single
Maximum drain current (Abs) (ID)	8.3 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

	IRF343	IRF340	IRF342	IRF341
Description	POWER, FET	POWER, FET	POWER, FET	POWER, FET
Reach Compliance Code	unknow	unknown	unknow	unknow
Configuration	Single	Single	Single	Single
Maximum drain current (Abs) (ID)	8.3 A	10 A	8.3 A	10 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	125 W	125 W	125 W	125 W
surface mount	NO	NO	NO	NO
Is it Rohs certified?	incompatible	-	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	-	SAMSUNG
JESD-609 code	e0	-	e0	e0
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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