2SC4956-T82 datasheet, PDF - EEWORLD Datasheet

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2SC4956-T82: DescriptionRF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD PACKAGE-4; CategoryDiscrete semiconductor The transistor; File Size42KB，6 Pages; ManufacturerNEC Electronics

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2SC4956-T82 Overview

RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD PACKAGE-4

2SC4956-T82 Parametric

Parameter Name	Attribute value
Maker	NEC Electronics
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	COLLECTOR
Maximum collector current (IC)	0.01 A
Collector-based maximum capacity	0.4 pF
Collector-emitter maximum voltage	6 V
Configuration	SINGLE
Minimum DC current gain (hFE)	75
highest frequency band	L BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	12000 MHz
Base Number Matches	1

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DATA SHEET

SILICON TRANSISTOR

2SC4956

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS MINI MOLD

FEATURES

• Low Noise, High Gain

• Low Voltage Operation

• Low Feedback Capacitance

= 0.20 pF TYP.

0.4

+0.1

–0.05

0.4

+0.1

–0.05

5˚

2.8

+0.2

–0.3

1.5

+0.2

–0.1

PACKAGE DIMENSIONS

in millimeters

ORDERING INFORMATION

PART

NUMBER

2SC4956-T1

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin3 (Base), Pin4 (Emitter) face to perforation

side of the tape.

0.6

+0.1

–0.05

5˚

1.1

+0.2

–0.1

2SC4956-T2

3 Kpcs/Reel.

5˚

0 to 0.1

5˚

Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4956)

PIN CONNECTIONS

ABSOLUTE MAXIMUM RATINGS (T

= 25 ˚C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

CBO

CEO

EBO

stg

150

–65 to +150

˚C

Collector

Emitter

Base

Emitter

The information in this document is subject to change without notice.

Caution;

Electrostatic Sensitive Device.

Document No. P10378EJ2V0DS00 (2nd edition)

(Previous No. TD-2407)

Date Published July 1995 P

Printed in Japan

0.16

+0.1

–0.06

Embossed tape 8 mm wide.

Pin1 (Collector), Pin2 (Emitter) face to perfora-

tion side of the tape.

0.8

0.4

+0.1

–0.05

(1.9)

QUANTITY

PACKING STYLE

2.9 ±0.2

(1.8)

0.85 0.95

1993

2SC4956-T82 Related Products

	2SC4956-T82	2SC4956	2SC4956-T1T82	2SC4956-T2T82
Description	RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, MINIMOLD PACKAGE-4	RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN,	RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN,	RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN,
Reach Compliance Code	unknown	unknown	unknown	unknown
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.01 A	0.01 A	0.01 A	0.01 A
Collector-based maximum capacity	0.4 pF	0.4 pF	0.4 pF	0.4 pF
Collector-emitter maximum voltage	6 V	6 V	6 V	6 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
highest frequency band	L BAND	L BAND	L BAND	L BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1	1
Number of terminals	4	4	4	4
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	12000 MHz	12000 MHz	12000 MHz	12000 MHz
Base Number Matches	1	1	1	1
Maker	NEC Electronics	-	NEC Electronics	NEC Electronics
package instruction	SMALL OUTLINE, R-PDSO-G4	-	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	-	4	4
ECCN code	EAR99	-	EAR99	EAR99
Other features	LOW NOISE	-	LOW NOISE	LOW NOISE
Minimum DC current gain (hFE)	75	-	75	75
Maximum operating temperature	150 °C	-	150 °C	150 °C

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