PHD63NQ03LT datasheet, PDF - EEWORLD Datasheet

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PHD63NQ03LT: DescriptionPower Field-Effect Transistor; CategoryDiscrete semiconductor The transistor; File Size365KB，15 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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PHD63NQ03LT Overview

Power Field-Effect Transistor

PHD63NQ03LT Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Nexperia
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	not_compliant
Is Samacsys	N
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	68.9 A
Maximum drain-source on-resistance	0.0177 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	240 A
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename

Nexperia.

Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

the references to Nexperia, as shown below.

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,

use

http://www.nexperia.com

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use

salesaddresses@nexperia.com

(email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

the version, as shown below:

reserved

Should be replaced with:

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail

or telephone (details via

salesaddresses@nexperia.com).

Thank you for your cooperation and

understanding,

Kind regards,

Team Nexperia

PHD63NQ03LT Related Products

	PHD63NQ03LT	PHD63NQ03LT,118	PHB63NQ03LT	PHB63NQ03LT,118	DBP-M998-00-2292-B	934057022127	934057020118
Description	Power Field-Effect Transistor	N-channel TrenchMOS logic level FET DPAK 3-Pin	Power Field-Effect Transistor	D2PAK 3-Pin	Array/Network Resistor, Bussed, Tantalum Nitride/nickel Chrome, 0.1W, 22900ohm, 100V, 0.1% +/-Tol, -300,300ppm/Cel, 8726,	Power Field-Effect Transistor	Power Field-Effect Transistor
Reach Compliance Code	not_compliant	not_compliant	compliant	compliant	compliant	compliant	compliant
Number of terminals	2	2	2	2	16	3	2
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR PACKAGE	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	DIP	FLANGE MOUNT	SMALL OUTLINE
Is it Rohs certified?	conform to	conform to	-	-	incompatible	conform to	conform to
Maker	Nexperia	Nexperia	Nexperia	Nexperia	-	Nexperia	Nexperia
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	PLASTIC, D2PAK-3	PLASTIC, D2PAK-3	-	FLANGE MOUNT, R-PSFM-T3	PLASTIC, SC-63, DPAK-3
Is Samacsys	N	N	N	N	-	-	-
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	-	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V	30 V	-	30 V	30 V
Maximum drain current (ID)	68.9 A	68.9 A	68.9 A	68.9 A	-	68.9 A	68.9 A
Maximum drain-source on-resistance	0.0177 Ω	0.0177 Ω	0.0177 Ω	0.0177 Ω	-	0.0177 Ω	0.0177 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252	TO-252	-	-	-	TO-220AB	TO-252
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	-	R-PSFM-T3	R-PSSO-G2
Number of components	1	1	1	1	-	1	1
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	-	-	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	240 A	240 A	240 A	240 A	-	240 A	240 A
surface mount	YES	YES	YES	YES	-	NO	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	-	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	-	-	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-	SILICON	SILICON
Base Number Matches	1	1	1	1	-	-	-

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