IDT70T659S10DRI datasheet, PDF

IDT70T659S10DRI: Description256K X 36 DUAL-PORT SRAM, 10 ns, PBGA256; Categorystorage; File Size346KB，27 Pages; ManufacturerIDT (Integrated Device Technology, Inc.); Websitehttp://www.idt.com/

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IDT70T659S10DRI Overview

256K X 36 DUAL-PORT SRAM, 10 ns, PBGA256

Parameter Name	Attribute value
Number of functions	1
Number of terminals	256
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	2.6 V
Minimum supply/operating voltage	2.4 V
Rated supply voltage	2.5 V
maximum access time	10 ns
Processing package description	BGA-256
state	ACTIVE
Craftsmanship	CMOS
packaging shape	SQUARE
Package Size	GRID ARRAY, LOW PROFILE
surface mount	Yes
Terminal form	BALL
Terminal spacing	1 mm
terminal coating	TIN LEAD
Terminal location	BOTTOM
Packaging Materials	PLASTIC/EPOXY
Temperature level	INDUSTRIAL
memory width	36
organize	256K X 36
storage density	9.44E6 deg
operating mode	ASYNCHRONOUS
Number of digits	262144 words
Number of digits	256K
Memory IC type	DUAL-PORT SRAM
serial parallel	PARALLEL

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