HYE18L256160BC-7.5 datasheet, PDF

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HYE18L256160BC-7.5: DescriptionSynchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 12 X 8 MM, 1 MM HEIGHT, PLASTIC, VFBGA-54; Categorystorage storage; File Size3MB，58 Pages; ManufacturerQIMONDA

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HYE18L256160BC-7.5 Overview

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 12 X 8 MM, 1 MM HEIGHT, PLASTIC, VFBGA-54

HYE18L256160BC-7.5 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	BGA
package instruction	FBGA, BGA54,9X9,32
Contacts	54
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PBGA-B54
JESD-609 code	e0
length	12 mm
memory density	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	54
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-20 °C
organize	16MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA54,9X9,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Celsius)	245
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.00035 A
Maximum slew rate	0.09 mA
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.65 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL EXTENDED
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	8 mm
Base Number Matches	1

HYE18L256160BC-7.5 Related Products

	HYE18L256160BC-7.5	HYE18L256160BCL-7.5	HYE18L256160BF-7.5	HYE18L256160BFL-7.5	HYB18L256160BFL-7.5
Description	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 12 X 8 MM, 1 MM HEIGHT, PLASTIC, VFBGA-54	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 12 X 8 MM, 1 MM HEIGHT, PLASTIC, VFBGA-54	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 12 X 8 MM, 1 MM HEIGHT, GREEN, PLASTIC, VFBGA-54	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 12 X 8 MM, 1 MM HEIGHT, GREEN, PLASTIC, VFBGA-54	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 12 X 8 MM, 1 MM HEIGHT, GREEN, PLASTIC, VFBGA-54
Parts packaging code	BGA	BGA	BGA	BGA	BGA
package instruction	FBGA, BGA54,9X9,32	FBGA, BGA54,9X9,32	FBGA, BGA54,9X9,32	FBGA, BGA54,9X9,32	FBGA,
Contacts	54	54	54	54	54
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54
length	12 mm	12 mm	12 mm	12 mm	12 mm
memory density	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	16	16	16	16	16
Number of functions	1	1	1	1	1
Number of ports	1	1	1	1	1
Number of terminals	54	54	54	54	54
word count	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	70 °C
Minimum operating temperature	-20 °C	-20 °C	-20 °C	-20 °C	-
organize	16MX16	16MX16	16MX16	16MX16	16MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	FBGA	FBGA	FBGA	FBGA	FBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
self refresh	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V
Minimum supply voltage (Vsup)	1.65 V	1.65 V	1.65 V	1.65 V	1.65 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL EXTENDED	COMMERCIAL EXTENDED	COMMERCIAL EXTENDED	COMMERCIAL EXTENDED	COMMERCIAL
Terminal form	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
width	8 mm	8 mm	8 mm	8 mm	8 mm
Base Number Matches	1	1	1	1	1
Is it Rohs certified?	incompatible	incompatible	conform to	conform to	-
Maximum clock frequency (fCLK)	133 MHz	133 MHz	133 MHz	133 MHz	-
I/O type	COMMON	COMMON	COMMON	COMMON	-
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	-
Humidity sensitivity level	3	3	3	3	-
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	-
Encapsulate equivalent code	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	BGA54,9X9,32	-
Peak Reflow Temperature (Celsius)	245	245	260	260	-
power supply	1.8 V	1.8 V	1.8 V	1.8 V	-
refresh cycle	8192	8192	8192	8192	-
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	-
Maximum standby current	0.00035 A	0.00035 A	0.00035 A	0.00035 A	-
Maximum slew rate	0.09 mA	0.09 mA	0.09 mA	0.09 mA	-
Maximum time at peak reflow temperature	20	20	40	40	-

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