Ultra-Low V
CE(sat)
IGBT
IXGH 38N60
V
CES
I
C25
V
CE(sat)
= 600 V
= 76 A
= 1.8 V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Ω
Clamped inductive load, L = 100
µH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
76
38
152
I
CM
= 76
@ 0.8 V
CES
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
TO-247 AD
G
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Features
l
l
l
Mounting torque (M3)
1.13/10 Nm/lb.in.
6
300
g
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
l
l
International standard package
JEDEC TO-247 AD
2nd generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25°C
T
J
= 125°C
5
200
1
±100
1.8
V
V
µA
mA
nA
V
l
l
l
l
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
µA,
V
GE
= 0 V
= 250
µA,
V
CE
= V
GE
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
l
l
l
Easy to mount with 1 screw
(isolated mounting screw hole)
Low losses, high efficiency
High power density
© 1996 IXYS All rights reserved
93025C (7/94)
IXGH 38N60
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
15
20
2500
S
pF
pF
pF
150
35
75
nC
nC
nC
ns
ns
1200
700
15
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.62 K/W
0.25
K/W
TO-247 AD Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= I
C90
; V
CE
= 10 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2 %
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
230
70
125
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25°C
°
I
C
= I
C90
, V
GE
= 15 V, L = 100
µH,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Ω
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125°C
°
I
C
= I
C90
, V
GE
= 15 V, L = 100
µH
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Ω
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
23
50
30
150
600
500
9
40
160
1
800
1000
15
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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