Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 500 mW
•
Tolerance series:
±5%
•
Working voltage range:
nom. 3.0 to 75 V
•
Non-repetitive peak reverse power
dissipation: max. 40 W.
handbook, halfpage
1N5225B to 1N5267B
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
The series consists of 43 types with nominal working voltages from 3.0 to 75 V.
k
a
MAM239
APPLICATIONS
•
Low-power voltage stabilizers or
voltage references.
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 50
°C;
lead length max.;
note 1
Lead length 8 mm; note 2
P
ZSM
non-repetitive peak reverse power
dissipation
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.3
t
p
= 8.3 ms; square wave;
T
j
≤
55
°C
prior to surge
T
stg
T
j
Notes
1. Device mounted on a printed circuit-board without metallization pad.
2. Tie-point temperature
≤
75
°C.
ELECTRICAL CHARACTERISTICS
Table 1
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 200 mA; see Fig.4
MAX.
1.1
UNIT
V
storage temperature
junction temperature
CONDITIONS
MIN.
−
MAX.
250
UNIT
mA
see Table
“Per type”
−
−
−
−
−65
−65
400
500
40
10
+200
+200
mW
mW
W
W
°C
°C
1996 Apr 26
2
1996 Apr 26
4
Philips Semiconductors
TYPE No.
WORKING DIFFERENTIAL
VOLTAGE RESISTANCE
V
Z
(V)
(1)
r
dif
(Ω)
at I
Ztest
at I
Ztest
NOM.
MAX.
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
1400
1600
1700
TEMP. COEFF.
S
Z
(%/K)
at I
Z
(2)
DIODE CAP.
TEST
C
d
(pF)
CURRENT
I
Ztest
(mA) at f = 1 MHz;
at V
R
= 0 V
MAX.
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
2.1
2.0
1.8
1.7
60
55
55
50
50
50
45
45
45
40
40
40
40
40
35
35
35
REVERSE CURRENT
at REVERSE
VOLTAGE
I
R
(µA)
MAX.
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
17.0
18.0
19.0
21.0
21.0
23.0
25.0
27.0
30.0
33.0
36.0
39.0
43.0
46.0
47.0
52.0
56.0
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
t
p
= 100
µs;
T
amb
= 25
°C
MAX.
1.25
1.25
1.25
1.0
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.3
0.25
0.2
Voltage regulator diodes
MAX.
+0.087
+0.088
+0.089
+0.090
+0.091
+0.091
+0.092
+0.093
+0.094
+0.095
+0.095
+0.096
+0.096
+0.097
+0.097
+0.097
+0.098
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
Notes
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
1N5225B to 1N5267B
1. V
Z
is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25
°C.
2. For types 1N5225B to 1N5242B the I
Z
current is 7.5 mA; for 1N5243B and higher I
Z
= I
Ztest
. S
Z
values valid between 25
°C
and 125
°C.
Product specification
Philips Semiconductors
Product specification
Voltage regulator diodes
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board without metallization pad.
PARAMETER
1N5225B to 1N5267B
CONDITIONS
VALUE
300
380
UNIT
K/W
K/W
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
1996 Apr 26
5
Sensor
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