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VS-43CTQ080SHM3

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2
CategoryDiscrete semiconductor    diode   
File Size201KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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VS-43CTQ080SHM3 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2

VS-43CTQ080SHM3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instructionD2PAK-3/2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.98 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current275 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage80 V
Maximum reverse current1000 µA
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
VS-43CTQ...SHM3, VS-43CTQ...-1HM3 Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
D
2
PAK
TO-262
FEATURES
• 175 °C T
J
operation
• Center tap configuration
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified meets JESD 201 class 1A whisker
test
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
VS-43CTQ...SHM3
VS-43CTQ...-1HM3
PRODUCT SUMMARY
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
E
AS
Package
Diode variation
2 x 20 A
80 V, 100 V
0.67 V
11 mA at 125 °C
175 °C
7.50 mJ
TO-263AB (D
2
PAK), TO-262AA
Common cathode
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, freewheeling diodes, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
20 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
40
80/100
850
0.67
-55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-43CTQ080SHM3
VS-43CTQ080-1HM3
80
VS-43CTQ100SHM3
VS-43CTQ100-1HM3
100
UNITS
V
Revision: 06-Mar-14
Document Number: 94964
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

VS-43CTQ080SHM3 Related Products

VS-43CTQ080SHM3 VS-43CTQ080-1HM3 VS-43CTQ080STRRHM3 VS-43CTQ080STRLHM3
Description Rectifier Diode, Schottky, 1 Phase, 2 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Rectifier Diode, Schottky, 1 Phase, 2 Element, 80V V(RRM), Silicon, TO-262AA, Rectifier Diode, Schottky, 1 Phase, 2 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Rectifier Diode, Schottky, 1 Phase, 2 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2
Is it Rohs certified? conform to conform to conform to conform to
Reach Compliance Code unknown unknow unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Other features FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE CATHODE CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.98 V 0.98 V 0.98 V 0.98 V
JEDEC-95 code TO-263AB TO-262AA TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2
Maximum non-repetitive peak forward current 275 A 275 A 275 A 275 A
Number of components 2 2 2 2
Phase 1 1 1 1
Number of terminals 2 3 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Guideline AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101
Maximum repetitive peak reverse voltage 80 V 80 V 80 V 80 V
Maximum reverse current 1000 µA 1000 µA 1000 µA 1000 µA
surface mount YES NO YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form GULL WING THROUGH-HOLE GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1
package instruction D2PAK-3/2 - D2PAK-3/2 D2PAK-3/2

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