M24C02-RBN6 datasheet, PDF - EEWORLD Datasheet

M24C02-RBN6: Description256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8; Categorystorage storage; File Size139KB，25 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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M24C02-RBN6 Overview

256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Parts packaging code	DIP
package instruction	PLASTIC, DIP-8
Contacts	8
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum clock frequency (fCLK)	0.4 MHz
Data retention time - minimum	40
Durability	1000000 Write/Erase Cycles
I2C control byte	1010DDDR
JESD-30 code	R-PDIP-T8
JESD-609 code	e0
length	9.27 mm
memory density	2048 bi
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	8
word count	256 words
character code	256
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256X8
Output characteristics	OPEN-DRAIN
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP8,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	225
power supply	2/5 V
Certification status	Not Qualified
Maximum seat height	5.33 mm
Serial bus type	I2C
Maximum standby current	0.000001 A
Maximum slew rate	0.0008 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	1.8 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn60Pb40)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	7.62 mm
Maximum write cycle time (tWC)	10 ms
write protect	HARDWARE

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