MPLAD30KP75CATR datasheet, PDF

MPLAD30KP75CATR: Description30000W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-1; CategoryDiscrete semiconductor diode; File Size336KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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MPLAD30KP75CATR Overview

30000W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-1

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Microsemi
package instruction	R-PSSO-G1
Contacts	1
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
Maximum breakdown voltage	92.1 V
Minimum breakdown voltage	83.3 V
Breakdown voltage nominal value	87.7 V
Shell connection	CATHODE
Maximum clamping voltage	121 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PSSO-G1
JESD-609 code	e0
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	30000 W
Number of components	1
Number of terminals	1
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Maximum power dissipation	2.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	75 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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