BYV4100/22133 datasheet, PDF - EEWORLD Datasheet

BYV4100/22133: DescriptionDIODE 4 A, 100 V, SILICON, RECTIFIER DIODE, Rectifier Diode; CategoryDiscrete semiconductor diode; File Size162KB，6 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BYV4100/22133 Overview

DIODE 4 A, 100 V, SILICON, RECTIFIER DIODE, Rectifier Diode

Parameter Name	Attribute value
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
application	FAST SOFT RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.98 V
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak forward current	90 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	4 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.015 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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