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BTS282ZE-3180A

Description
Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-220, 7 PIN
CategoryDiscrete semiconductor    The transistor   
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BTS282ZE-3180A Overview

Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-220, 7 PIN

BTS282ZE-3180A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTO-220
package instructionSMALL OUTLINE, R-PSSO-G7
Contacts7
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)2000 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Minimum drain-source breakdown voltage49 V
Maximum drain current (ID)80 A
Maximum drain-source on-resistance0.0095 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G7
JESD-609 codee3
Number of components1
Number of terminals7
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)320 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Speed TEMPFET
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Data Sheet

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Rev.1.3, 2013-07-26

BTS282ZE-3180A Related Products

BTS282ZE-3180A BTS282ZE-3230
Description Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-220, 7 PIN Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-220, 7 PIN
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
Parts packaging code TO-220 TO-220
package instruction SMALL OUTLINE, R-PSSO-G7 FLANGE MOUNT, R-PSFM-T7
Contacts 7 7
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas) 2000 mJ 2000 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Minimum drain-source breakdown voltage 49 V 49 V
Maximum drain current (ID) 80 A 80 A
Maximum drain-source on-resistance 0.0095 Ω 0.0095 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G7 R-PSFM-T7
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 7 7
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 320 A 320 A
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal surface MATTE TIN MATTE TIN
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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