M29W400T
M29W400B
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
NOT FOR NEW DESIGN
M29W400T and M29W400B are replaced
respectively by the M29W400BT and
M29W400BB
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 90ns
FAST PROGRAMMING TIME
– 10µs by Byte / 16µs by Word typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte or Word-by-Word
– Status Register bits and Ready/Busy Output
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code, M29W400T: 00EEh
– Device Code, M29W400B: 00EFh
DESCRIPTION
The M29W400 is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byteor Word-
by-Word basis using only a single 2.7V to 3.6V V
CC
supply. For Program and Erase operations the
necessary high voltages are generated internally.
The device can also be programmed in standard
programmers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
graming and erase on programming equipment,
November 1999
44
1
TSOP48 (N)
12 x 20 mm
SO44 (M)
BGA
FBGA48 (ZA)
8 x 6 solder balls
Figure 1. Logic Diagram
VCC
18
A0-A17
W
E
G
RP
M29W400T
M29W400B
15
DQ0-DQ14
DQ15A–1
BYTE
RB
VSS
AI02065
1/34
This is information on a product still in productionbut not recommended for new designs.
M29W400T, M29W400B
Figure 2A. TSOP Pin Connections
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
W
RP
NC
NC
RB
NC
A17
A7
A6
A5
A4
A3
A2
A1
1
48
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
VSS
E
A0
Figure 2B. TSOP Reverse Pin Connections
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
VSS
E
A0
1
48
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
W
RP
NC
NC
RB
NC
A17
A7
A6
A5
A4
A3
A2
A1
12
13
M29W400T
M29W400B
(Normal)
37
36
12
13
M29W400T
M29W400B
(Reverse)
37
36
24
25
AI02066
24
25
AI02067
Warning:
NC = Not Connected.
Warning:
NC = Not Connected.
Figure 2C. SO Pin Connections
Table 1. Signal Names
A0-A17
Address Inputs
Data Input/Outputs, Command Inputs
Data Input/Outputs
Data Input/Output or Address Input
Chip Enable
Output Enable
Write Enable
Reset / Block Temporary Unprotect
Ready/Busy Output
Byte/Word Organisation
Supply Voltage
Ground
NC
RB
A17
A7
A6
A5
A4
A3
A2
A1
A0
E
VSS
G
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
2
3
4
5
6
7
8
9
10
11 M29W400T
12 M29W400B
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RP
W
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ0-DQ7
DQ8-DQ14
DQ15A–1
E
G
W
RP
RB
BYTE
V
CC
V
SS
AI02068
Warning:
NC = Not Connected.
2/34
M29W400T, M29W400B
Figure 2D. FBGA Package Ball Out (Top View)
1
2
3
4
5
6
7
8
F
A13
A12
A14
A15
A16
BYTE
DQ15
A–1
VSS
E
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
D
W
RP
NC
NC
DQ5
DQ12
VCC
DQ4
C
RB
NC
NC
NC
DQ2
DQ10
DQ11
DQ3
B
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A
A3
A4
A2
A1
A0
E
G
VSS
AI00912
Warning:
NC = Not Connected.
Table 2. Absolute Maximum Ratings
(1)
Symbol
T
A
T
BIAS
T
STG
V
IO (2)
V
CC
V
(A9, E, G, RP)
(2)
Parameter
Ambient Operating Temperature
(3)
Temperature Under Bias
Storage Temperature
Input or Output Voltages
Supply Voltage
A9, E, G, RP Voltage
Value
–40 to 85
–50 to 125
–65 to 150
–0.6 to 5
–0.6 to 5
–0.6 to 13.5
Unit
°C
°C
°C
V
V
V
Notes:
1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings”
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other
relevant quality documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns.
3. Depends on range.
DESCRIPTION
(Cont’d)
and temporarily unprotected to make changes in
the application. Each block can be programmed
and erased over 100,000 cycles.
Instructions for Read/Reset, Auto Select for read-
ing the Electronic Signature or Block Protection
status, Programming, Block and Chip Erase, Erase
Suspend and Resume are written to the device in
cycles of commands to a CommandInterface using
standard microprocessor write timings.
The device is offered in TSOP48 (12 x 20mm),
SO44 and FBGA48 (8 x 6 balls, 0.8mm pitch)
packages. Both normal and reverse pinouts are
available for the TSOP48 package.
3/34
M29W400T, M29W400B
Figure 3. Memory Map and Block Address Table (x8)
M29W400T
7FFFFh
16K BOOT BLOCK
7C000h
7BFFFh
8K PARAMETER BLOCK
7A000h
79FFFh
8K PARAMETER BLOCK
78000h
77FFFh
32K MAIN BLOCK
70000h
6FFFFh
64K MAIN BLOCK
60000h
5FFFFh
64K MAIN BLOCK
50000h
4FFFFh
64K MAIN BLOCK
40000h
3FFFFh
30000h
2FFFFh
20000h
1FFFFh
64K MAIN BLOCK
10000h
0FFFFh
64K MAIN BLOCK
00000h
00000h
AI02090
M29W400B
7FFFFh
64K MAIN BLOCK
70000h
6FFFFh
64K MAIN BLOCK
60000h
5FFFFh
64K MAIN BLOCK
50000h
4FFFFh
64K MAIN BLOCK
40000h
3FFFFh
64K MAIN BLOCK
30000h
2FFFFh
64K MAIN BLOCK
20000h
1FFFFh
64K MAIN BLOCK
10000h
0FFFFh
32K MAIN BLOCK
08000h
07FFFh
8K PARAMETER BLOCK
8K PARAMETER BLOCK
04000h
03FFFh
16K BOOT BLOCK
64K MAIN BLOCK
64K MAIN BLOCK
06000h
05FFFh
Organisation
The M29W400 is organised as 512K x8 or 256K
x16 bits selectable by the BYTE signal. When
BYTE is Low the Byte-wide x8 organisation is
selected and the address lines are DQ15A–1 and
A0-A17. The Data Input/Output signal DQ15A–1
acts as address line A–1 which selects the lower or
upper Byte of the memory word for output on
DQ0-DQ7, DQ8-DQ14 remain at High impedance.
When BYTE is High the memory uses the address
inputs A0-A17 and the Data Input/Outputs DQ0-
DQ15. Memory control is provided by Chip Enable
E, Output Enable G and Write Enable W inputs.
A Reset/Block Temporary Unprotection RP tri-level
input provides a hardware reset when pulled Low,
and when held High (at V
ID
) temporarily unprotects
blocks previously protected allowing them to be
programed and erased. Erase and Programopera-
tions are controlled by an internal Program/Erase
Controller (P/E.C.). Status Register data output on
DQ7 provides a Data Polling signal, and DQ6 and
DQ2 provide Toggle signals to indicate the state of
the P/E.C operations. A Ready/Busy RB output
indicates the completion of the internal algorithms.
4/34
Memory Blocks
The devices feature asymmetrically blocked archi-
tecture providing system memory integration. Both
M29W400Tand M29W400Bdevices have an array
of 11 blocks, one Boot Block of 16 KBytes or 8
KWords, two Parameter Blocks of 8 KBytes or 4
KWords, one Main Block of 32 KBytes or 16
KWords and seven Main Blocks of 64 KBytes or 32
KWords. The M29W400T has the Boot Block at the
top of the memory address space and the
M29W400B locates the Boot Block starting at the
bottom. The memory maps are showed in Figure
3. Each block can be erased separately, any com-
bination of blocks can be specified for multi-block
erase or the entire chip may be erased. The Erase
operations are managed automatically by the
P/E.C. The block erase operation can be sus-
pended in order to read from or program to any
block not being ersased, and then resumed.
Block protection provides additional data security.
Each block can be separately protected or unpro-
tected against Program or Erase on programming
equipment. All previously protected blocks can be
temporarily unprotected in the application.
M29W400T, M29W400B
Table 3A. M29W400T Block Address Table
Address Range (x8)
00000h-0FFFFh
10000h-1FFFFh
20000h-2FFFFh
30000h-3FFFFh
40000h-4FFFFh
50000h-5FFFFh
60000h-6FFFFh
70000h-77FFFh
78000h-79FFFh
7A000h-7BFFFh
7C000h-7FFFFh
Address Range (x16)
00000h-07FFFh
08000h-0FFFFh
10000h-17FFFh
18000h-1FFFFh
20000h-27FFFh
28000h-2FFFFh
30000h-37FFFh
38000h-3BFFFh
3C000h-3CFFFh
3D000h-3DFFFh
3E000h-3FFFFh
A17
0
0
0
0
1
1
1
1
1
1
1
A16
0
0
1
1
0
0
1
1
1
1
1
A15
0
1
0
1
0
1
0
1
1
1
1
A14
X
X
X
X
X
X
X
0
1
1
1
A13
X
X
X
X
X
X
X
X
0
0
1
A12
X
X
X
X
X
X
X
X
0
1
X
Table 3B. M29W400B Block Address Table
Address Range (x8)
00000h-03FFFh
04000h-05FFFh
06000h-07FFFh
08000h-0FFFFh
10000h-1FFFFh
20000h-2FFFFh
30000h-3FFFFh
40000h-4FFFFh
50000h-5FFFFh
60000h-6FFFFh
70000h-7FFFFh
Address Range (x16)
00000h-01FFFh
02000h-02FFFh
03000h-03FFFh
04000h-07FFFh
08000h-0FFFFh
10000h-17FFFh
18000h-1FFFFh
20000h-27FFFh
28000h-2FFFFh
30000h-37FFFh
38000h-3FFFFh
A17
0
0
0
0
0
0
0
1
1
1
1
A16
0
0
0
0
0
1
1
0
0
1
1
A15
0
0
0
0
1
0
1
0
1
0
1
A14
0
0
0
1
X
X
X
X
X
X
X
A13
0
1
1
X
X
X
X
X
X
X
X
A12
X
0
1
X
X
X
X
X
X
X
X
Bus Operations
The following operations can be performed using
the appropriate bus cycles: Read (Array, Electronic
Signature, Block Protection Status), Write com-
mand, Output Disable, Standby, Reset, Block Pro-
tection, Unprotection, Protection Verify, Unprotec-
tion Verify and Block Temporary Unprotection. See
Tables 4 and 5.
5/34
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