M368L5623MTN-CB3 datasheet, PDF

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M368L5623MTN-CB3: DescriptionDDR SDRAM Unbuffered Module; Categorystorage storage; File Size251KB，17 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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M368L5623MTN-CB3 Overview

DDR SDRAM Unbuffered Module

M368L5623MTN-CB3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	DIMM
package instruction	DIMM, DIMM184
Contacts	184
Reach Compliance Code	compli
ECCN code	EAR99
Is Samacsys	N
access mode	FOUR BANK PAGE BURST
Maximum access time	0.7 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N184
memory density	8589934592 bi
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	184
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM184
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum standby current	0.096 A
Maximum slew rate	3.92 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Base Number Matches	1

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2GB Unbuffered DIMM

Preliminary

DDR SDRAM

DDR SDRAM Unbuffered Module

184pin Unbuffered Module based on 1Gb M-die

with 64/72-bit ECC/Non ECC

Revision 0.0

April 2004

Rev. 0.0 April 2004

M368L5623MTN-CB3 Related Products

	M368L5623MTN-CB3	M381L5623MTN	M381L5623MTM-CB0	M381L5623MTM-CB3	M381L5623MTM-CA2	M368L5623MTN-CA2	M368L5623MTN-CB0	M368L5623MTN
Description	DDR SDRAM Unbuffered Module	DDR SDRAM Unbuffered Module	DDR SDRAM Unbuffered Module	DDR SDRAM Unbuffered Module	DDR SDRAM Unbuffered Module	DDR SDRAM Unbuffered Module	DDR SDRAM Unbuffered Module	DDR SDRAM Unbuffered Module
Is it Rohs certified?	incompatible	-	incompatible	incompatible	incompatible	incompatible	incompatible	-
Maker	SAMSUNG	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	-
Parts packaging code	DIMM	-	DIMM	DIMM	DIMM	DIMM	DIMM	-
package instruction	DIMM, DIMM184	-	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	-
Contacts	184	-	184	184	184	184	184	-
Reach Compliance Code	compli	-	compli	compli	compli	compli	compli	-
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	-
access mode	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-
Maximum access time	0.7 ns	-	0.75 ns	0.7 ns	0.75 ns	0.75 ns	0.75 ns	-
Other features	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-
Maximum clock frequency (fCLK)	166 MHz	-	133 MHz	166 MHz	133 MHz	133 MHz	133 MHz	-
I/O type	COMMON	-	COMMON	COMMON	COMMON	COMMON	COMMON	-
JESD-30 code	R-XDMA-N184	-	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	-
memory density	8589934592 bi	-	9663676416 bi	9663676416 bi	9663676416 bi	8589934592 bi	8589934592 bi	-
Memory IC Type	DDR DRAM MODULE	-	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	-
memory width	64	-	72	72	72	64	64	-
Number of functions	1	-	1	1	1	1	1	-
Number of ports	1	-	1	1	1	1	1	-
Number of terminals	184	-	184	184	184	184	184	-
word count	134217728 words	-	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words	-
character code	128000000	-	128000000	128000000	128000000	128000000	128000000	-
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-
Maximum operating temperature	70 °C	-	70 °C	70 °C	70 °C	70 °C	70 °C	-
organize	128MX64	-	128MX72	128MX72	128MX72	128MX64	128MX64	-
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-
Package body material	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-
encapsulated code	DIMM	-	DIMM	DIMM	DIMM	DIMM	DIMM	-
Encapsulate equivalent code	DIMM184	-	DIMM184	DIMM184	DIMM184	DIMM184	DIMM184	-
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	MICROELECTRONIC ASSEMBLY	-	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	-
power supply	2.5 V	-	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	-
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
refresh cycle	8192	-	8192	8192	8192	8192	8192	-
self refresh	YES	-	YES	YES	YES	YES	YES	-
Maximum standby current	0.096 A	-	0.108 A	0.108 A	0.108 A	0.096 A	0.096 A	-
Maximum slew rate	3.92 mA	-	3.825 mA	4.41 mA	3.825 mA	3.4 mA	3.4 mA	-
Maximum supply voltage (Vsup)	2.7 V	-	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	-
Minimum supply voltage (Vsup)	2.3 V	-	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	-
Nominal supply voltage (Vsup)	2.5 V	-	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	-
surface mount	NO	-	NO	NO	NO	NO	NO	-
technology	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS	-
Temperature level	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	-
Terminal form	NO LEAD	-	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	-
Terminal pitch	1.27 mm	-	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	-
Terminal location	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL	-

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