ARIZONA MICROTEK, INC.
AZ10EL11
AZ100EL11
ECL/PECL 1:2 Differential Fanout Buffer
FEATURES
•
•
•
•
•
265ps Propagation Delay
5ps Skew Between Outputs
High Bandwidth Output Transitions
75kΩ Internal Input Pulldown Resistors
Direct Replacement for ON Semiconductor
MC10EL11 & MC100EL11
PACKAGE AVAILABILITY
PACKAGE
SOIC 8
SOIC 8 T&R
SOIC 8 T&R
SOIC 8
SOIC 8 T&R
SOIC 8 T&R
TSSOP 8
TSSOP 8 T&R
TSSOP 8 T&R
TSSOP 8
TSSOP 8 T&R
TSSOP 8 T&R
PART NO.
AZ10EL11D
AZ10EL11DR1
AZ10EL11DR2
AZ100EL11D
AZ100EL11DR1
AZ100EL11DR2
AZ10EL11T
AZ10EL11TR1
AZ10EL11TR2
AZ100EL11T
AZ100EL11TR1
AZ100EL11TR2
MARKING
AZM10EL11
AZM10EL11
AZM10EL11
AZM100EL11
AZM100EL11
AZM100EL11
AZTEL11
AZTEL11
AZTEL11
AZHEL11
AZHEL11
AZHEL11
DESCRIPTION
The AZ10/100EL11 is a differential 1:2 fanout gate. The device is functionally similar to the E111 device but
with higher performance capabilities. Having within-device skews and output transition times significantly
improved over the E111, the EL11 is ideally suited for those applications that require the ultimate in AC
performance.
The differential inputs of the EL11 employ clamping circuitry to maintain stability under open input conditions.
If the inputs are left open (pulled to V
EE
) the Q outputs will go LOW.
NOTE: Specifications in the ECL/PECL tables are valid when thermal equilibrium is established.
LOGIC DIAGRAM AND PINOUT ASSIGNMENT
Q0 1
PIN DESCRIPTION
PIN
D, D
¯
Q0, Q0, Q1, Q1
¯¯
¯¯
V
CC
V
EE
FUNCTION
Data Inputs
Data Outputs
Positive Supply
Negative Supply
8
VCC
Q0 2
7
D
Q1 3
6
D
Q1 4
5
VEE
1630 S. STAPLEY DR., SUITE 125
•
MESA, ARIZONA 85204
•
USA
•
(480) 962-5881
•
FAX (480) 890-2541
www.azmicrotek.com
AZ10EL11
AZ100EL11
Absolute Maximum Ratings are those values beyond which device life may be impaired.
Symbol
V
CC
V
I
V
EE
V
I
I
OUT
T
A
T
STG
Characteristic
PECL Power Supply (V
EE
= 0V)
PECL Input Voltage
(V
EE
= 0V)
ECL Power Supply
(V
CC
= 0V)
ECL Input Voltage
(V
CC
= 0V)
Output Current
--- Continuous
--- Surge
Operating Temperature Range
Storage Temperature Range
Rating
0 to +8.0
0 to +6.0
-8.0 to 0
-6.0 to 0
50
100
-40 to +85
-65 to +150
Unit
Vdc
Vdc
Vdc
Vdc
mA
°C
°C
10K ECL DC Characteristics
(V
EE
= -4.75V to -5.5V, V
CC
= GND)
Symbol
Characteristic
V
OH
Output HIGH Voltage
1
V
OL
Output LOW Voltage
1
V
IH
Input HIGH Voltage
V
IL
Input LOW Voltage
Input HIGH Current
I
IH
Input LOW Current
0.5
I
IL
I
EE
Power Supply Current
26
31
1.
Each output is terminated through a 50Ω resistor to V
CC
– 2V.
Min
-1080
-1950
-1230
-1950
-40°C
Typ
Max
-890
-1650
-890
-1500
150
Min
-1020
-1950
-1170
-1950
0.5
26
31
0°C
Typ
Max
-840
-1630
-840
-1480
150
Min
-980
-1950
-1130
-1950
0.5
26
31
25°C
Typ
Max
-810
-1630
-810
-1480
150
Min
-910
-1950
-1060
-1950
0.5
26
31
85°C
Typ
Max
-720
-1595
-720
-1445
150
Unit
mV
mV
mV
mV
µA
µA
mA
10K PECL DC Characteristics
(V
EE
= GND, V
CC
= +5.0V)
Symbol
Characteristic
V
OH
Output HIGH Voltage
1,2
V
OL
Output LOW Voltage
1,2
V
IH
Input HIGH Voltage
1
V
IL
Input LOW Voltage
1
I
IH
Input HIGH Current
Input LOW Current
0.5
0.5
0.5
I
IL
I
EE
Power Supply Current
26
31
26
31
1.
For supply voltages other that 5.0V, use the ECL table values and ADD supply voltage value.
2.
Each output is terminated through a 50Ω resistor to V
CC
– 2V.
Min
3920
3050
3770
3050
-40°C
Typ
Max
4110
3350
4110
3500
150
Min
3980
3050
3830
3050
0°C
Typ
Max
4160
3370
4160
3520
150
Min
4020
3050
3870
3050
25°C
Typ
Max
4190
3370
4190
3520
150
31
Min
4090
3050
3940
3050
0.5
26
26
31
85°C
Typ
Max
4280
3405
4280
3555
150
Unit
mV
mV
mV
mV
µA
µA
mA
100K ECL DC Characteristics
(V
EE
= -4.2V to -5.5V, V
CC
= GND)
Symbol
Characteristic
V
OH
Output HIGH Voltage
1
V
OL
Output LOW Voltage
1
V
IH
Input HIGH Voltage
V
IL
Input LOW Voltage
Input HIGH Current
I
IH
Input LOW Current
0.5
I
IL
I
EE
Power Supply Current
26
31
1.
Each output is terminated through a 50Ω resistor to V
CC
– 2V.
Min
-1085
-1830
-1165
-1810
-40°C
Typ
-1005
-1695
Max
-880
-1555
-880
-1475
150
Min
-1025
-1810
-1165
-1810
0.5
26
31
0°C
Typ
-955
-1705
Max
-880
-1620
-880
-1475
150
Min
-1025
-1810
-1165
-1810
0.5
26
31
25°C
Typ
-955
-1705
Max
-880
-1620
-880
-1475
150
Min
-1025
-1810
-1165
-1810
0.5
30
36
85°C
Typ
-955
-1705
Max
-880
-1620
-880
-1475
150
Unit
mV
mV
mV
mV
µA
µA
mA
100K PECL DC Characteristics
(V
EE
= GND, V
CC
= +5.0V)
Symbol
Characteristic
V
OH
Output HIGH Voltage
1,2
V
OL
Output LOW Voltage
1,2
V
IH
Input HIGH Voltage
1
V
IL
Input LOW Voltage
1
I
IH
Input HIGH Current
Input LOW Current
0.5
0.5
0.5
I
IL
I
EE
Power Supply Current
26
31
26
31
1.
For supply voltages other that 5.0V, use the ECL table values and ADD supply voltage value.
2.
Each output is terminated through a 50Ω resistor to V
CC
– 2V.
Min
3915
3170
3835
3190
-40°C
Typ
3995
3305
Max
4120
3445
4120
3525
150
Min
3975
3190
3835
3190
0°C
Typ
4045
3295
Max
4120
3380
4120
3525
150
Min
3975
3190
3835
3190
25°C
Typ
4045
3295
Max
4120
3380
4120
3525
150
31
Min
3975
3190
3835
3190
0.5
26
30
36
85°C
Typ
4045
3295
Max
4120
3380
4120
3525
150
Unit
mV
mV
mV
mV
µA
µA
mA
October 2001 * REV - 2
www.azmicrotek.com
2
AZ10EL11
AZ100EL11
AC Characteristics
(V
EE
=10E(-4.75V to -5.5V), 100E(-4.2V to -5.5V); V
CC
=GND or V
EE
=GND; V
CC
=10E(+4.75V to +5.5V),
100E(+4.2V to +5.5V))
Symbol
t
PLH
/ t
PHL
t
SKEW
V
PP
(AC)
V
CMR
t
r
/ t
f
1.
2.
3.
4.
Characteristic
Propagation Delay to
Output
Within-Device Skew
1
Duty Cycle Skew
2
Minimum Input Swing
3
Common Mode Range
4
Min
135
-40°C
Typ
260
5
5
150
V
CC
-
2.0
V
CC
-
0.4
150
V
CC
-
2.0
Max
385
Min
185
0°C
Typ
260
5
5
Max
335
20
20
V
CC
-
0.4
150
V
CC
-
2.0
Min
190
25°C
Typ
265
5
5
Max
340
20
20
V
CC
-
0.4
150
V
CC
-
2.0
Min
215
85°C
Typ
290
5
5
Max
365
20
20
V
CC
-
0.4
Unit
ps
ps
mV
V
ps
Rise/Fall Time
100
350
100
350
100
350
100
350
20 – 80%
Within-device skew defined as identical transitions on similar paths through a device.
Duty cycle skew is the difference between a t
PLH
and t
PHL
propagation delay through a device.
V
PP
is the minimum peak-to-peak differential input swing for which AC parameters are guaranteed. The device has a DC voltage gain of
≈
40.
The V
CMR
range is referenced to the most positive side of the differential input signal. Normal operation is obtained if the HIGH level falls within
the specified range and the peak-to-peak voltage lies between V
PP
(min) and 1V.
October 2001 * REV - 2
www.azmicrotek.com
3
AZ10EL11
AZ100EL11
PACKAGE DIAGRAM
SOIC 8
NOTES:
1.
DIMENSIONS D AND E DO NOT
INCLUDE MOLD PROTRUSION.
2.
MAXIMUM MOLD PROTRUSION
FOR D IS 0.15mm.
3.
MAXIMUM MOLD PROTRUSION
FOR E IS 0.25mm.
DIM
A
A
1
A
2
A
3
b
p
c
D
E
e
H
E
L
L
p
Q
v
w
y
Z
θ
MILLIMETERS
MIN
MAX
1.75
0.10
0.25
1.25
1.45
0.25
0.36
0.49
0.19
0.25
4.8
5.0
3.8
4.0
1.27
5.80
6.20
1.05
0.40
1.00
0.60
0.70
0.25
0.25
0.10
0.30
0.70
O
8
O
0
INCHES
MIN
MAX
0.069
0.004
0.010
0.049
0.057
0.01
0.014
0.019
0.0075
0.0100
0.19
0.20
0.15
0.16
0.050
0.228
0.244
0.041
0.016
0.039
0.024
0.028
0.01
0.01
0.004
0.012
0.028
O
0
8
O
October 2001 * REV - 2
www.azmicrotek.com
4
AZ10EL11
AZ100EL11
PACKAGE DIAGRAM
TSSOP 8
NOTES:
1.
DIMENSIONS D AND E DO NOT
INCLUDE MOLD PROTRUSION.
2.
MAXIMUM MOLD PROTRUSION
FOR D IS 0.15mm.
3.
MAXIMUM MOLD PROTRUSION
FOR E IS 0.25mm.
DIM
A
A
1
A
2
A
3
b
p
c
D
E
e
H
E
L
L
p
v
w
y
Z
θ
MILLIMETERS
MIN
MAX
1.10
0.05
0.15
0.80
0.95
0.25
0.25
0.45
0.15
0.28
2.90
3.10
2.90
3.10
0.65
4.70
5.10
0.94
0.40
0.70
0.10
0.10
0.10
0.35
0.70
O
6
O
0
October 2001 * REV - 2
www.azmicrotek.com
5
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