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F25L16QA-100PG2S

Description
Flash, 16MX1, PDSO8, 0.150 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8
Categorystorage    storage   
File Size468KB,48 Pages
ManufacturerESMT
Websitehttp://www.esmt.com.tw/
Elite Semiconductor Memory Technology Inc. (ESMT) is a professional IC design company founded by Dr. Hu Zhao in June 1998. Its headquarters is located in Hsinchu Science Park, Taiwan. The company's main business includes research, development, manufacturing, sales and related technical services of IC products. It was listed on the Taiwan Stock Exchange in March 2002.
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F25L16QA-100PG2S Overview

Flash, 16MX1, PDSO8, 0.150 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8

F25L16QA-100PG2S Parametric

Parameter NameAttribute value
MakerESMT
Parts packaging codeSOIC
package instructionSOP,
Contacts8
Reach Compliance Codeunknown
Maximum clock frequency (fCLK)100 MHz
JESD-30 codeR-PDSO-G8
length4.9 mm
memory density16777216 bit
Memory IC TypeFLASH
memory width1
Number of functions1
Number of terminals8
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize16MX1
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Programming voltage2.7 V
Maximum seat height1.75 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
typeNOR TYPE
width3.9 mm
Base Number Matches1

F25L16QA-100PG2S Preview

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ESMT
Flash
F25L16QA (2S)
16 Mbit Serial Flash Memory
with Dual and Quad
FEATURES
Single supply voltage 2.7~3.6V
Standard, Dual and Quad SPI
Speed
- Read max frequency: 50MHz
- Fast Read max frequency: 50MHz / 86MHz / 100MHz
- Fast Read Dual/Quad max frequency: 50MHz / 86MHz /
100MHz
(100MHz / 172MHz / 200MHz equivalent Dual SPI;
200MHz / 344MHz / 400MHz equivalent Quad SPI)
Low power consumption
- Active current: 25 mA (max.)
- Standby current: 25
μ
A (max.)
- Deep Power Down current: 10
μ
A (max.)
Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
Program
- Page programming time: 1.5 ms (typical)
Erase
- Chip Erase time 10 sec (typical)
- 64K bytes Block Erase time 1 sec (typical)
- 32K bytes Block Erase time 500 ms (typical)
- 4K bytes Sector Erase time 120 ms (typical)
Page Programming
- 256 byte per programmable page
Lockable 512 bytes OTP security sector
SPI Serial Interface
- SPI Compatible: Mode 0 and Mode 3
End of program or erase detection
Write Protect (
WP
)
Hold Pin ( HOLD )
All Pb-free products are RoHS-Compliant
ORDERING INFORMATION
Product ID
F25L16QA –50PG2S
F25L16QA –86PG2S
F25L16QA –100PG2S
F25L16QA –50PAG2S
F25L16QA –86PAG2S
F25L16QA –100PAG2S
F25L16QA –50PHG2S
F25L16QA –86PHG2S
Speed
50MHz
86MHz
100MHz
50MHz
86MHz
100MHz
50MHz
86MHz
16-lead
SOIC
300 mil
Pb-free
8-lead
SOIC
200 mil
Pb-free
8-lead
SOIC
150 mil
Pb-free
Package
Comments
F25L16QA –100PHG2S 100MHz
F25L16QA –50DG2S
F25L16QA –86DG2S
F25L16QA –100DG2S
F25L16QA –50HG2S
F25L16QA –86HG2S
F25L16QA –100HG2S
50MHz
86MHz
100MHz
50MHz
86MHz
100MHz
8-contact
WSON
6x5 mm
Pb-free
8-pin
PDIP
300 mil
Pb-free
Elite Semiconductor Memory Technology Inc.
Publication Date: Oct. 2012
Revision: 1.3
1/48
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