CDSH270LEADFREE datasheet, PDF

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CDSH270LEADFREE: DescriptionRectifier Diode, Schottky, 1 Element, 0.1A, 100V V(RRM), Silicon, DO-35; CategoryDiscrete semiconductor diode; File Size341KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CDSH270LEADFREE Overview

Rectifier Diode, Schottky, 1 Element, 0.1A, 100V V(RRM), Silicon, DO-35

CDSH270LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	O-LALF-W2
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-35
JESD-30 code	O-LALF-W2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Maximum output current	0.1 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.1 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
surface mount	NO
technology	SCHOTTKY
Terminal surface	MATTE TIN (315)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	10
Base Number Matches	1

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CDSH270

SILICON SCHOTTKY DIODE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CDSH270 silicon

Schottky diode is designed to replace the 1N270

Germanium diode. Some advantages over the 1N270

are lower forward voltage, lower leakage current, faster

switching speed, and a more robust package.

MARKING: FULL PART NUMBER

DO-35 CASE

MAXIMUM RATINGS:

(TA=25°C)

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=10ms

Power Dissipation

Operating Junction Temperature

Storage Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

VRRM

IFRM

IFSM

Tstg

UNITS

°C

°C/W

100

350

750

100

-65 to +125

-65 to +150

300

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

TYP

VR=50V

VR=50V, TA=100°C

IF=1.0mA

IF=100mA

IF=200mA

VR=10V, f=1.0MHz

0.9

MAX

100

0.45

1.0

UNITS

μA

1.2

R1 (16-August 2012)

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