Laser Diode, 850nm
Parameter Name | Attribute value |
Maker | OSI Laser Diode Inc |
Reach Compliance Code | unknown |
Maximum forward voltage | 4.2 V |
Installation features | THROUGH HOLE MOUNT |
Maximum operating temperature | 60 °C |
Minimum operating temperature | -50 °C |
Optoelectronic device types | LASER DIODE |
peak wavelength | 850 nm |
Maximum response time | 1e-9 s |
Semiconductor material | GaAlAs |
Spectral bandwidth | 1e-8 m |
surface mount | NO |
Base Number Matches | 1 |
LA162 | LA167 | LA63 | |
---|---|---|---|
Description | Laser Diode, 850nm | Laser Diode, 850nm | Laser Diode, 850nm |
Maker | OSI Laser Diode Inc | OSI Laser Diode Inc | OSI Laser Diode Inc |
Reach Compliance Code | unknown | unknown | unknown |
Maximum forward voltage | 4.2 V | 7 V | 1.4 V |
Installation features | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT | THROUGH HOLE MOUNT |
Maximum operating temperature | 60 °C | 60 °C | 60 °C |
Minimum operating temperature | -50 °C | -50 °C | -50 °C |
Optoelectronic device types | LASER DIODE | LASER DIODE | LASER DIODE |
peak wavelength | 850 nm | 850 nm | 850 nm |
Maximum response time | 1e-9 s | 1e-9 s | 1e-9 s |
Semiconductor material | GaAlAs | GaAlAs | GaAlAs |
Spectral bandwidth | 1e-8 m | 1e-8 m | 1e-8 m |
surface mount | NO | NO | NO |
Base Number Matches | 1 | 1 | 1 |