|
ASI10784 |
BLX96 |
Description |
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, |
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, |
Maker |
Advanced Semiconductor, Inc. |
Advanced Semiconductor, Inc. |
package instruction |
POST/STUD MOUNT, O-CRPM-F4 |
POST/STUD MOUNT, O-CRPM-F4 |
Reach Compliance Code |
unknown |
unknown |
ECCN code |
EAR99 |
EAR99 |
Maximum collector current (IC) |
1 A |
1 A |
Collector-based maximum capacity |
10 pF |
10 pF |
Collector-emitter maximum voltage |
24 V |
24 V |
highest frequency band |
ULTRA HIGH FREQUENCY BAND |
ULTRA HIGH FREQUENCY BAND |
JESD-30 code |
O-CRPM-F4 |
O-CRPM-F4 |
Number of terminals |
4 |
4 |
Maximum operating temperature |
200 °C |
200 °C |
Package body material |
CERAMIC, METAL-SEALED COFIRED |
CERAMIC, METAL-SEALED COFIRED |
Package shape |
ROUND |
ROUND |
Package form |
POST/STUD MOUNT |
POST/STUD MOUNT |
Polarity/channel type |
NPN |
NPN |
Certification status |
Not Qualified |
Not Qualified |
surface mount |
NO |
NO |
Terminal form |
FLAT |
FLAT |
Terminal location |
RADIAL |
RADIAL |
transistor applications |
AMPLIFIER |
AMPLIFIER |
Transistor component materials |
SILICON |
SILICON |
Base Number Matches |
1 |
1 |