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DAM3MA39

Description
1800 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size43KB,3 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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DAM3MA39 Overview

1800 W, UNIDIRECTIONAL, SILICON, TVS DIODE

DAM3MA39 Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
package instructionR-PDSO-C2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Maximum dynamic impedance30 Ω
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation1800 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation1800 W
Certification statusNot Qualified
Nominal reference voltage39 V
surface mountYES
technologyZENER
Terminal formC BEND
Terminal locationDUAL
Maximum voltage tolerance7.4%
Working test current20 mA
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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