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BC338-40B1

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size212KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

BC338-40B1 Overview

Small Signal Bipolar Transistor

BC338-40B1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
Base Number Matches1
BC337…BC338-16/25/40
NPN Transistor
TO-92
Small Signal Product
Features
◇For
switching and AF amplifier applications
◇These
types are subdivided into three groups -16, -25 and -40,
according to their DC current gain
◇Moisture
sensitivity level 1
◇Driver
transistor
◇Pb
free version and RoHS compliant
◇Green
compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
◇Case
: TO-92 small outline plastic package
per MIL-STD-202, Method 208 guaranteed
◇High
temperature soldering guaranteed: 260℃/10s
◇Wright
approx.: 190 mg
Ordering Information (example)
Part No.
BC337-16/25/40
Package
TO-92
Packing
4K / AMMO
Packing code
A1
Packing code
(Green)
A1G
Marking
BC337-16/25/40
Manufacture code
B0
Note:Detail please see "Ordering Information(detail, example)" below.
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
TOT
T
J
T
STG
Symbol
Current Gain Group -16
-25
-40
h
FE
BC337
50
45
5
800
1
625
150
- 55 to + 150
Min.
100
160
250
60
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
100
12
BC338
30
25
Units
V
V
V
mA
A
mW
O
O
C
C
Parameter
DC Current Gain
at V
CE
= 1 V, I
C
=100mA
Max.
250
400
630
-
100
100
-
-
-
-
-
0.7
1.2
-
-
Units
V
at V
CE
= 1 V, I
C
=300mA
Collector Base Cutoff Current
at V
CB
=50V
at V
CB
=30V
Collector Base Breakdown Voltage
at I
C
=100uA
Collector Emitter Breakdown Voltage
at I
C
=2mA
Emitter Base Breakdown Voltage
Collector Emitter Saturation Voltage
Base Emitter On Voltage
Transition Frequency
Output Capacitance
at I
E
=100uA
at I
C
=500mA, I
B
=50mA
at V
CE
=1V, I
C
=300mA
at V
CE
=5V, I
C
=10mA, f=50MHz
at V
CB
=10V, f=1MHz
BC337
BC338
BC337
BC338
BC337
BC338
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(on)
f
T
C
ob
I
CBO
-
-
50
30
45
25
5
-
-
-
-
nA
V
V
V
V
V
MHz
pF
Version:A13

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