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307URA200P4PBF

Description
330A, 2000V, SILICON, RECTIFIER DIODE, DO-205AB
CategoryDiscrete semiconductor    diode   
File Size93KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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307URA200P4PBF Overview

330A, 2000V, SILICON, RECTIFIER DIODE, DO-205AB

307URA200P4PBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-CUPM-H1
Reach Compliance Codecompliant
Other featuresHIGH SURGE CAPABILITY
applicationHIGH VOLTAGE HIGH POWER
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-205AB
JESD-30 codeO-CUPM-H1
Maximum non-repetitive peak forward current8640 A
Number of components1
Phase1
Number of terminals1
Maximum output current330 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage2000 V
surface mountNO
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Maximum time at peak reflow temperature40
Base Number Matches1
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