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M36L0T7050T0ZAQF

Description
128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package
Categorystorage    storage   
File Size108KB,18 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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M36L0T7050T0ZAQF Overview

128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package

M36L0T7050T0ZAQF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeBGA
package instruction8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
Contacts88
Reach Compliance Codeunknow
Maximum access time90 ns
Other featuresPSRAM IS ORGANIZED AS 2M X 16
JESD-30 codeR-PBGA-B88
JESD-609 codee1
length10 mm
memory density134217728 bi
Memory IC TypeMEMORY CIRCUIT
memory width16
Mixed memory typesFLASH+PSRAM
Number of functions1
Number of terminals88
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA88,8X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8,3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.000005 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
M36L0T7050T0
M36L0T7050B0
128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory
32Mbit (2M x16) PSRAM, Multi-Chip Package
FEATURES SUMMARY
MULTI-CHIP PACKAGE
– 1 die of 128Mbit (8Mx16, Multiple Bank,
Multi-level, Burst) Flash Memory
– 1 die of 32Mbit (2Mx16) Pseudo SRAM
SUPPLY VOLTAGE
– V
DDF
= 1.7 to 2V
– V
DDP
= V
DDQ
= 2.7 to 3.3V
– V
PP
= 9V for fast program (12V tolerant)
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code (Top Flash Configuration)
M36L0T7050T0: 88C4h
– Device Code (Bottom Flash
Configuration) M36L0T7050B0: 88C5h
PACKAGE
– Compliant with Lead-Free Soldering
Processes
– Lead-Free Versions
FLASH MEMORY
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 50MHz
– Asynchronous Page Read mode
– Random Access: 90ns
SYNCHRONOUS BURST READ SUSPEND
PROGRAMMING TIME
– 10µs typical Word program time using
Write to Buffer and Program
MEMORY ORGANIZATION
– Multiple Bank Memory Array: 8 Mbit
Banks
– Parameter Blocks (Top or Bottom
location)
DUAL OPERATIONS
– program/erase in one Bank while read in
others
– No delay between read and write
operations
SECURITY
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
Figure 1. Package
FBGA
TFBGA88 (ZAQ)
8 x 10mm
BLOCK LOCKING
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WP for Block Lock-Down
– Absolute Write Protection with V
PP
= V
SS
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
PSRAM
ACCESS TIME: 70ns
LOW STANDBY CURRENT: 100µA
DEEP POWER-DOWN CURRENT: 10µA
BYTE CONTROL: UB
P
/LB
P
PROGRAMMABLE PARTIAL ARRAY
8 WORD PAGE ACCESS CAPABILITY: 18ns
POWER-DOWN MODES
– Deep Power-Down
– 4 Mbit Partial Array Refresh
– 8 Mbit Partial Array Refresh
– 16 Mbit Partial Array Refresh
December 2004
1/18

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Description 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package
Is it Rohs certified? conform to - - conform to incompatible
Maker STMicroelectronics - - STMicroelectronics STMicroelectronics
Parts packaging code BGA - - BGA BGA
package instruction 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 - - 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 8 X 10 MM, 0.80 MM PITCH, TFBGA-88
Contacts 88 - - 88 88
Reach Compliance Code unknow - - unknow _compli
Maximum access time 90 ns - - 90 ns 90 ns
Other features PSRAM IS ORGANIZED AS 2M X 16 - - PSRAM IS ORGANIZED AS 2M X 16 PSRAM IS ORGANIZED AS 2M X 16
JESD-30 code R-PBGA-B88 - - R-PBGA-B88 R-PBGA-B88
JESD-609 code e1 - - e1 e0
length 10 mm - - 10 mm 10 mm
memory density 134217728 bi - - 134217728 bi 134217728 bi
Memory IC Type MEMORY CIRCUIT - - MEMORY CIRCUIT MEMORY CIRCUIT
memory width 16 - - 16 16
Mixed memory types FLASH+PSRAM - - FLASH+PSRAM FLASH+PSRAM
Number of functions 1 - - 1 1
Number of terminals 88 - - 88 88
word count 8388608 words - - 8388608 words 8388608 words
character code 8000000 - - 8000000 8000000
Operating mode ASYNCHRONOUS - - ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C - - 85 °C 85 °C
Minimum operating temperature -25 °C - - -25 °C -25 °C
organize 8MX16 - - 8MX16 8MX16
Package body material PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA - - TFBGA TFBGA
Encapsulate equivalent code BGA88,8X12,32 - - BGA88,8X12,32 BGA88,8X12,32
Package shape RECTANGULAR - - RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH - - GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) 260 - - 260 NOT SPECIFIED
power supply 1.8,3 V - - 1.8,3 V 1.8,3 V
Certification status Not Qualified - - Not Qualified Not Qualified
Maximum seat height 1.2 mm - - 1.2 mm 1.2 mm
Maximum standby current 0.000005 A - - 0.000005 A 0.000005 A
Maximum slew rate 0.03 mA - - 0.03 mA 0.03 mA
Maximum supply voltage (Vsup) 1.95 V - - 1.95 V 1.95 V
Minimum supply voltage (Vsup) 1.7 V - - 1.7 V 1.7 V
surface mount YES - - YES YES
technology CMOS - - CMOS CMOS
Temperature level OTHER - - OTHER OTHER
Terminal surface TIN SILVER COPPER - - TIN SILVER COPPER Tin/Lead (Sn/Pb)
Terminal form BALL - - BALL BALL
Terminal pitch 0.8 mm - - 0.8 mm 0.8 mm
Terminal location BOTTOM - - BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED
width 8 mm - - 8 mm 8 mm

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