1N4678 to 1N4717
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Zener voltage specified at 50
µA
• Maximum delta V
Z
given from
e2
10
µA
to 100
µA
• Very high stability
• Low noise
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
94 9367
Applications
Voltage stabilization
Mechanical Data
Case:
DO-35 Glass case
Weight:
approx. 125 mg
Packaging codes/options:
TR / 10 k per 13 " reel, 30 k/box
TAP / 10 k per Ammo tape (52 mm tape), 30 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Z-current
l = 4 mm
Test condition
Symbol
P
tot
I
Z
Value
500
P
tot
/V
Z
Unit
mW
mA
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction temperature
Storage temperature range
Junction ambient
l = 4 mm, T
L
= constant
Test condition
Symbol
T
j
T
stg
R
thJA
Value
175
- 65 to + 175
300
Unit
°C
°C
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 100 mA
Symbol
V
F
Min
Typ.
Max
1.5
Unit
V
Document Number 85586
Rev. 1.4, 18-Feb-05
www.vishay.com
1
1N4678 to 1N4717
Vishay Semiconductors
Electrical Characteristics
Partnumber
1)
Zener Voltage
V
Z
@ I
Z
= 50
µA
V
typ.
1)
1N4678
1N4679
1N4680
1N4681
1N4682
1N4683
1N4684
1N4685
1N4686
1N4687
1N4688
1N4689
1N4690
1N4691
1N4692
1N4693
1N4694
1N4695
1N4696
1N4697
1N4698
1N4699
1N4700
1N4701
1N4702
1N4703
1N4704
1N4705
1N4706
1N4707
1N4708
1N4709
1N4710
1N4711
1N4712
1N4713
1N4714
1N4715
1N4716
1N4717
1)
2)
3)
4)
Max.Reverse
Current
I
R 3)
µA
max
1.89
2.1
2.31
2.52
2.835
3.15
3.465
3.78
4.095
4.515
4.935
5.355
5.88
6.51
7.14
7.875
8.61
9.135
9.555
10.5
11.55
12.6
13.65
14.7
15.75
16.8
17.85
18.9
19.95
21
23.1
25.2
26.25
28.35
29.4
31.5
34.65
37.8
40.95
45.15
7.5
5
4
2
1
0.8
7.5
7.5
5
4
10
10
10
10
10
10
1
1
1
1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
Test Voltage
V
R 3)
V
1
1
1
1
1
1
1.5
2
2
2
3
3
4
5
5.1
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.8
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19
20.4
21.2
22.8
25
27.3
29.6
32.6
Max. Zener
Current
I
ZM 2)
mA
120
110
100
95
90
85
80
75
70
65
60
55
50
45
35
31.8
29
27.4
26.2
24.8
21.6
20.4
19
17.5
16.3
15.4
14.5
13.2
12.5
11.9
10.8
9.9
9.5
8.8
8.5
7.9
7.2
6.6
6.1
5.5
Max. Voltage
Change
∆V
Z 4)
V
0.70
0.70
0.75
0.80
0.85
0.90
0.95
0.95
0.97
0.99
0.99
0.97
0.96
0.95
0.90
0.75
0.5
0.1
0.08
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
0.22
0.24
0.25
0.27
0.28
0.3
0.33
0.36
0.39
0.43
min.
1.71
1.9
2.09
2.28
2.565
2.85
3.135
3.42
3.705
4.085
4.465
4.845
5.32
5.89
6.46
7.125
7.79
8.265
8.645
9.5
10.45
11.4
12.35
13.3
14.25
15.2
16.15
17.1
18.05
19
20.9
22.8
23.75
25.65
26.6
28.5
31.35
34.2
37.05
40.85
1.8
2
2.2
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
Toleranzing and voltage designation (V
Z
). The type numbers shown have a standard tolerance of ± 5 % on the nominal zener voltage.
Maximum zener current ratings (I
ZM
). Maximum zener current ratings are based on maximum zener voltage of the individual units.
Reverse leakage current (I
R
). Reverse leakage currents are guaranteed and measured at V
R
as shown on the table.
Maximum voltage change ( V
Z
). Voltage change is equal to the difference between V
Z
at 100
µA
and V
Z
at 10
µA.
www.vishay.com
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Document Number 85586
Rev. 1.4, 18-Feb-05
1N4678 to 1N4717
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
P –Total Power Dissipation ( mW)
tot
600
500
400
300
200
100
0
0
40
80
120
160
200
TK
VZ
–Temperature Coefficient of V
Z
( 10
–4
/K)
15
10
5
I
Z
=5mA
0
–5
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
95 9602
T
amb
– Ambient T
emperature(°C )
95 9600
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
1000
C
D
– Diode Capacitance ( pF )
V
Z
–VoltageChange mV )
(
200
T
j
=25°C
100
150
V
R
=2V
100
T
j
=25°C
I
Z
=5mA
10
50
1
0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 2. Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
1.3
V
Ztn
– Relative
VoltageChange
Figure 5. Diode Capacitance vs. Z-Voltage
100
V
Ztn
=V
Zt
/V
Z
(25°C)
I
F
– Forward Current ( mA)
1.2
TK
VZ
=10 x 10
–4
/K
8 x 10
–4
/K
6 x 10
–4
/K
4 x 10
–4
/K
2 x 10
–4
/K
10
T
j
=25°C
1
1.1
1.0
0.9
0.8
–60
0
–2 x 10
–4
/K
–4 x 10
–4
/K
0.1
0.01
0.001
0
60
120
180
240
95 9605
0
0.2
0.4
0.6
0.8
1.0
95 9599
T
j
– Junction Temperature (°C )
V
F
– Forward Voltage ( V )
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
Figure 6. Forward Current vs. Forward Voltage
Document Number 85586
Rev. 1.4, 18-Feb-05
www.vishay.com
3
1N4678 to 1N4717
Vishay Semiconductors
100
r
Z
– Differential Z-Resistance (
Ω
)
1000
I
Z
– Z-Current ( mA)
80
P
tot
=500mW
T
amb
=25°C
60
I
Z
=1mA
100
5mA
10 10mA
40
20
0
0
4
8
12
16
20
1
0
95 9606
T
j
=25°C
5
10
15
20
25
V
Z
– Z-Voltage ( V )
95 9604
V
Z
– Z-Voltage ( V )
Figure 7. Z-Current vs. Z-Voltage
Figure 9. Differential Z-Resistance vs. Z-Voltage
50
P
tot
=500mW
T
amb
=25°C
I
Z
– Z-Current ( mA)
40
30
20
10
0
15
20
25
30
35
95 9607
V
Z
– Z-Voltage ( V )
Figure 8. Z-Current vs. Z-Voltage
Z
thp
–Thermal Resistance for Pulse Cond. (KW)
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
t
p
/T=0.02
t
p
/T=0.05
1
10
–1
10
0
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
x T/Z
thp
)
1/2
)/(2r
zj
)
10
1
t
p
– Pulse Length ( ms )
10
2
t
p
/T=0.01
R
thJA
=300K/W
T=T
jmax
–T
amb
95 9603
Figure 10. Thermal Response
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Document Number 85586
Rev. 1.4, 18-Feb-05
1N4678 to 1N4717
Vishay Semiconductors
Package Dimensions in mm (Inches)
Cathode Identification
ISO Method E
∅
0.55 (0.02) max.
94 9366
∅
2.0 (0.08) max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
26 (1.02) min.
3.9 (0.15) max.
26 (1.02) min.
Document Number 85586
Rev. 1.4, 18-Feb-05
www.vishay.com
5
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