Mixer Diode, High Barrier, X Band, Silicon,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | COMMON ANODE, 2 ELEMENTS |
| Maximum diode capacitance | 0.15 pF |
| Diode component materials | SILICON |
| Diode type | MIXER DIODE |
| Maximum forward voltage (VF) | 0.64 V |
| frequency band | X BAND |
| JESD-30 code | O-PRMW-F3 |
| JESD-609 code | e0 |
| Number of components | 2 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | MICROWAVE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Maximum power dissipation | 0.1 W |
| Certification status | Not Qualified |
| surface mount | YES |
| technology | SCHOTTKY |
| Terminal surface | TIN LEAD |
| Terminal form | FLAT |
| Terminal location | RADIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Schottky barrier type | HIGH BARRIER |
| Base Number Matches | 1 |
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