DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D049
PDZ-B series
Voltage regulator diodes
Product specification
Supersedes data of 1998 Apr 23
2002 Feb 18
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation: max. 400 mW
•
Small plastic package suitable for surface mounted
design
•
Wide variety of voltage ranges: nom. 2.4 to 36 V
(E24 range)
•
Tolerance approximately
±2%.
handbook, halfpage
PDZ-B series
PINNING
PIN
1
2
APPLICATIONS
•
General voltage regulation.
DESCRIPTION
Low-power general purpose voltage regulator diodes in a
small plastic SMD SOD323 package.
MARKING
TYPE
NUMBER
PDZ2.4B
PDZ2.7B
PDZ3.0B
PDZ3.3B
PDZ3.6B
PDZ3.9B
PDZ4.3B
PDZ4.7B
MARKING
CODE
Z0
Z1
Z2
Z3
Z4
Z5
Z6
Z7
TYPE
NUMBER
PDZ5.1B
PDZ5.6B
PDZ6.2B
PDZ6.8B
PDZ7.5B
PDZ8.2B
PDZ9.1B
PDZ10B
MARKING
CODE
Z8
Z9
ZA
ZB
ZC
ZD
ZE
ZF
TYPE
NUMBER
PDZ11B
PDZ12B
PDZ13B
PDZ15B
PDZ16B
PDZ18B
PDZ20B
PDZ22B
1
Top view
Fig.1 Simplified outline (SOD323) and symbol.
,
cathode
anode
MARKING
CODE
ZG
ZH
ZJ
ZK
ZL
ZM
ZN
ZP
−
−
−
DESCRIPTION
2
MAM387
TYPE
NUMBER
PDZ24B
PDZ27B
PDZ30B
PDZ33B
PDZ36B
MARKING
CODE
ZQ
ZR
ZS
ZT
ZU
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
tot
T
stg
T
j
Note
1. Device mounted on a printed-circuit board measuring 11
×
25
×
1.6 mm.
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
storage temperature
junction temperature
t
p
= 100
µs;
square wave;
T
amb
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1;
see Fig.2
CONDITIONS
MIN.
MAX.
200
see Table 2
400
+150
150
mW
°C
°C
UNIT
mA
−65
2002 Feb 18
2
Philips Semiconductors
Product specification
Voltage regulator diodes
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
R
th j-a
Note
1. Device mounted on a printed-circuit board measuring 11
×
25
×
1.6 mm.
CHARACTERISTICS
Table 1
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
PDZ2.4B
PDZ2.7B
PDZ3.0B
PDZ3.3B
PDZ3.6B
PDZ3.9B
PDZ4.3B
PDZ4.7B
PDZ5.1B
PDZ5.6B
PDZ6.2B
PDZ6.8B
PDZ7.5B
PDZ8.2B
PDZ9.1B
PDZ10B
PDZ11B
PDZ12B
PDZ13B
PDZ15B
PDZ16B
PDZ18B
PDZ20B
PDZ22B
PDZ24B
PDZ27B
PDZ30B
PDZ33B
PDZ36B
CONDITIONS
I
F
= 10 mA; see Fig.3
I
F
= 100 mA; see Fig.3
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1.5 V
V
R
= 2.5 V
V
R
= 3 V
V
R
= 3.5 V
V
R
= 4 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 8 V
V
R
= 9 V
V
R
= 10 V
V
R
= 11 V
V
R
= 12 V
V
R
= 13 V
V
R
= 15 V
V
R
= 17 V
V
R
= 19 V
V
R
= 21 V
V
R
= 23 V
V
R
= 25 V
V
R
= 27 V
3
PARAMETER
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
note 1
CONDITIONS
PDZ-B series
VALUE
130
340
UNIT
K/W
K/W
MAX.
0.9
1.1
50
20
10
5
5
3
3
2
2
1
500
500
500
500
500
100
100
100
100
50
50
50
50
50
50
50
50
50
50
UNIT
V
V
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
2002 Feb 18
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Table 2
Per type
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Z
= 5 mA
MIN.
PDZ2.4B
PDZ2.7B
PDZ3.0B
PDZ3.3B
PDZ3.6B
PDZ3.9B
PDZ4.3B
PDZ4.7B
PDZ5.1B
PDZ5.6B
PDZ6.2B
PDZ6.8B
PDZ7.5B
PDZ8.2B
PDZ9.1B
PDZ10B
PDZ11B
PDZ12B
PDZ13B
PDZ15B
PDZ16B
PDZ18B
PDZ20B
PDZ22B
PDZ24B
PDZ27B
PDZ30B
PDZ33B
PDZ36B
2.43
2.69
2.85
3.32
3.60
3.89
4.17
4.55
4.96
5.48
6.06
6.65
7.28
8.02
8.85
9.77
10.78
11.74
12.91
14.34
15.85
17.56
19.52
21.54
23.72
26.19
29.19
32.15
35.07
MAX.
2.63
2.91
3.07
3.53
3.85
4.16
4.48
4.75
5.20
5.73
6.33
6.93
7.60
8.36
9.23
10.21
11.22
12.24
13.49
14.98
16.51
18.35
20.39
22.47
24.78
27.53
30.69
33.79
36.87
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
at I
Z
(mA)
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
at I
Z
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
TEMP. COEFF.
S
Z
(mV/K)
at I
Z
= 5 mA
(see Figs 4 and 5)
TYP.
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
0.3
1.9
2.7
3.4
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
12.4
14.4
16.4
18.4
20.4
23.4
26.6
29.7
33.0
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0
MAX.
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
108
105
103
99
97
93
88
84
80
73
66
60
59
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
µs;
T
amb
= 25
°C
MAX.
8.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
5.5
5.5
5.5
5.5
3.5
3.5
3.5
3.5
3.0
3.0
2.5
2.0
1.5
1.5
1.5
1.3
1.3
1.0
1.0
0.9
0.8
2002 Feb 18
4
Philips Semiconductors
Voltage regulator diodes
TYPE
NUMBER
MAX.
1000
1000
1000
1000
500
500
600
600
250
100
80
60
60
60
60
60
60
80
80
80
80
80
100
100
120
150
200
250
300
MAX.
100
100
95
95
90
90
90
90
60
50
50
40
10
10
10
10
10
10
10
15
20
20
20
25
30
40
40
40
60
PDZ-B series
Product specification
Philips Semiconductors
Product specification
Voltage regulator diodes
PDZ-B series
handbook, halfpage
500
MBK245
MBG781
Ptot
(mW)
400
handbook, halfpage
300
IF
(mA)
200
300
200
100
100
0
0
50
100
150
200
Tamb (°C)
0
0.6
0.8
VF (V)
1.0
T
j
= 25
°C.
Fig.3
Fig.2 Power derating curve.
Forward current as a function of forward
voltage; typical values.
MGL273
MGL274
handbook, halfpage
0
handbook, halfpage
10
12
SZ
(mV/K)
−1
4.3
SZ
(mV/K)
5
11
10
9.1
8.2
7.5
6.8
3.9
3.6
6.2
5.6
5.1
4.7
−2
3.3
3.0
2.4
2.7
0
−3
−5
0
20
40
IZ (mA)
60
0
4
8
12
16
IZ (mA)
20
PDZ2.4B to PDZ4.3B.
T
j
= 25
°C
to 150
°C.
PDZ4.7B to PDZ12B.
T
j
= 25
°C
to 150
°C.
Fig.4
Temperature coefficient as a function of
working current; typical values.
Fig.5
Temperature coefficient as a function of
working current; typical values.
2002 Feb 18
5
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