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MAC212-4FP

Description
ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS
CategoryAnalog mixed-signal IC    Trigger device   
File Size70KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MAC212-4FP Overview

ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS

MAC212-4FP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Maximum DC gate trigger current50 mA
Maximum DC gate trigger voltage2 V
Maximum holding current50 mA
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Maximum leakage current2 mA
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current12 A
Maximum repetitive peak off-state leakage current10 µA
Off-state repetitive peak voltage200 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeTRIAC
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC212FP/D
Triacs
MAC212FP
Series
MAC212AFP
Series
ISOLATED TRIACs
THYRISTORS
12 AMPERES RMS
200 thru 800 VOLTS
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC212FP Series) or
Four Modes (MAC212AFP Series)
MT2
G
MT1
CASE 221C-02
STYLE 3
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted.)
Rating
Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC212-4FP, MAC212A4FP
MAC212-6FP, MAC212A6FP
MAC212-8FP, MAC212A8FP
MAC212-10FP, MAC212A10FP
On-State RMS Current (TC = +85°C) Full Cycle Sine Wave 50 to 60 Hz(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C)
preceded and followed by rated current
Circuit Fusing (t = 8.3 ms)
Peak Gate Power (TC = +85°C, Pulse Width = 10
µs)
Average Gate Power (TC = +85°C, t = 8.3 ms)
Peak Gate Current (TC = +85°C, Pulse Width = 10
µs)
RMS Isolation Voltage (TA = 25°C, Relative Humidity
Operating Junction Temperature
Storage Temperature Range
Symbol
VDRM
200
400
600
800
IT(RMS)
ITSM
I2t
PGM
PG(AV)
12
100
40
20
0.35
2
1500
–40 to +125
–40 to +150
Amps
Amps
A2s
Watts
Watt
Amps
Volts
°C
°C
Value
Unit
Volts
p
20%)
IGM
V(ISO)
TJ
Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Symbol
R
θJC
R
θCS
R
θJA
Max
2.1
2.2 (typ)
60
Unit
°C/W
°C/W
°C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Motorola Thyristor Device Data
©
Motorola, Inc. 1995
1

MAC212-4FP Related Products

MAC212-4FP MAC212-8FP MAC212-6FP MAC212-10FP
Description ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS ISOLATED TRIACs THYRISTORS 12 AMPERES RMS 200 thru 800 VOLTS
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow unknow unknow
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE
Maximum DC gate trigger current 50 mA 50 mA 50 mA 50 mA
Maximum DC gate trigger voltage 2 V 2 V 2 V 2 V
Maximum holding current 50 mA 50 mA 50 mA 50 mA
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0 e0 e0
Maximum leakage current 2 mA 2 mA 2 mA 2 mA
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 12 A 12 A 12 A 12 A
Maximum repetitive peak off-state leakage current 10 µA 10 µA 10 µA 10 µA
Off-state repetitive peak voltage 200 V 600 V 400 V 800 V
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Trigger device type TRIAC TRIAC TRIAC TRIAC
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