MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC212FP/D
Triacs
MAC212FP
Series
MAC212AFP
Series
ISOLATED TRIACs
THYRISTORS
12 AMPERES RMS
200 thru 800 VOLTS
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
•
Blocking Voltage to 800 Volts
•
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
•
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
•
Gate Triggering Guaranteed in Three Modes (MAC212FP Series) or
Four Modes (MAC212AFP Series)
MT2
G
MT1
CASE 221C-02
STYLE 3
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted.)
Rating
Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C,
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC212-4FP, MAC212A4FP
MAC212-6FP, MAC212A6FP
MAC212-8FP, MAC212A8FP
MAC212-10FP, MAC212A10FP
On-State RMS Current (TC = +85°C) Full Cycle Sine Wave 50 to 60 Hz(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C)
preceded and followed by rated current
Circuit Fusing (t = 8.3 ms)
Peak Gate Power (TC = +85°C, Pulse Width = 10
µs)
Average Gate Power (TC = +85°C, t = 8.3 ms)
Peak Gate Current (TC = +85°C, Pulse Width = 10
µs)
RMS Isolation Voltage (TA = 25°C, Relative Humidity
Operating Junction Temperature
Storage Temperature Range
Symbol
VDRM
200
400
600
800
IT(RMS)
ITSM
I2t
PGM
PG(AV)
12
100
40
20
0.35
2
1500
–40 to +125
–40 to +150
Amps
Amps
A2s
Watts
Watt
Amps
Volts
°C
°C
Value
Unit
Volts
p
20%)
IGM
V(ISO)
TJ
Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
Symbol
R
θJC
R
θCS
R
θJA
Max
2.1
2.2 (typ)
60
Unit
°C/W
°C/W
°C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Motorola Thyristor Device Data
©
Motorola, Inc. 1995
1
MAC212FP Series MAC212AFP Series
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Peak Blocking Current (Either Direction)
(VD = Rated VDRM, Gate Open) TJ = 25°C
TJ = +125°C
Peak On-State Voltage (Either Direction)
(ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms,
Minimum Gate Pulse Width = 2
µs)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms,
Minimum Gate Pulse Width = 2
µs)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
MT2(–), G(+) “A ” SUFFIX ONLY
Holding Current (Either Direction)
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA)
Turn-On Time
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1
µs,
Pulse Width = 2
µs)
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
Gate Unenergized, TC = +85°C)
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TC = +85°C)
Symbol
IDRM
—
—
—
—
1.3
10
2
1.75
Min
Typ
Max
Unit
µA
mA
Volts
mA
p
2%)
VTM
IGT
—
—
—
—
—
VGT
12
12
20
35
50
50
50
75
Volts
—
—
—
—
0.2
0.2
IH
—
0.9
0.9
1.1
1.4
—
—
6
2
2
2
2.5
—
—
50
mA
tgt
—
1.5
—
µs
dv/dt(c)
—
5
—
V/µs
dv/dt
—
100
—
V/µs
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
TYPICAL CHARACTERISTICS
P D(AV), AVERAGE POWER DISSIPATION (WATT)
125
28
24
20
16
12
8.0
4.0
0
0
2.0
4.0
6.0
8.0
10
12
14
IT(RMS), RMS ON-STATE CURRENT (AMP)
α
α
= CONDUCTION ANGLE
α
dc
α
= 180°
90°
60°
30°
115
α
= 30°
α
α
85
α
= CONDUCTION ANGLE
60°
90°
180°
dc
105
95
75
0
2.0
4.0
6.0
8.0
10
12
14
IT(RMS), RMS ON-STATE CURRENT (AMP)
Figure 1. Current Derating
Figure 2. Power Dissipation
2
Motorola Thyristor Device Data
MAC212FP Series MAC212AFP Series
100
50
20
10
5
TJ = 25°C
TJ = 125°C
100
I TSM , PEAK SURGE CURRENT (AMP)
i T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
80
60
CYCLE
TC = 70°C
f = 60 Hz
SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT
40
2
1
0.5
20
0
1
2
3
NUMBER OF CYCLES
5
7
10
0.2
VGT , GATE TRIGGER VOLTAGE (NORMALIZED)
0.1
0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4
Figure 4. Maximum Nonrepetitive Surge Current
4.4
2
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 3. Maximum On-State Characteristics
1.6
1.2
0.8
0.4
0
–60
–40
–20
0
20
40
60
80
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Voltage
I GT, GATE TRIGGER CURRENT (NORMALIZED)
2
IH , HOLDING CURRENT (NORMALIZED)
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2.8
2.4
2
1.6
1.2
0.8
0.4
0
–60
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.6
1.2
0.8
0.4
0
–60
–40
–20
0
20
40
60
80
–40
–20
0
20
40
60
80
TC, CASE TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current
Figure 7. Typical Holding Current
Motorola Thyristor Device Data
3
MAC212FP Series MAC212AFP Series
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.5
0.2
0.1
0.05
Z
θJC(t)
= r(t)
•
R
θJC
0.02
0.01
0.1
0.2
0.5
1
2
5
20
50
t, TIME (ms)
100
200
500
1k
2k
5k
10 k
Figure 8. Thermal Response
4
Motorola Thyristor Device Data
MAC212FP Series MAC212AFP Series
PACKAGE DIMENSIONS
–B–
P
–T–
F
N
E
C
S
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION Z.
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
Z
INCHES
MIN
MAX
0.680
0.700
0.388
0.408
0.175
0.195
0.025
0.040
0.340
0.355
0.140
0.150
0.100 BSC
0.110
0.155
0.018
0.028
0.500
0.550
0.045
0.070
0.049
–––
0.270
0.290
0.480
0.500
0.090
0.120
0.105
0.115
0.070
0.090
MILLIMETERS
MIN
MAX
17.28
17.78
9.86
10.36
4.45
4.95
0.64
1.01
8.64
9.01
3.56
3.81
2.54 BSC
2.80
3.93
0.46
0.71
12.70
13.97
1.15
1.77
1.25
–––
6.86
7.36
12.20
12.70
2.29
3.04
2.67
2.92
1.78
2.28
H
–Y–
Q
1 2 3
A
STYLE 3:
PIN 1. MT 1
2. MT 2
3. GATE
K
Z
L
G
D
3 PL
J
R
0.25 (0.010)
M
B
M
Y
CASE 221C-02
Motorola Thyristor Device Data
5