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1N6295/4H

Description
Trans Voltage Suppressor Diode, 1500W, 81V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1.5KE, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size119KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

1N6295/4H Overview

Trans Voltage Suppressor Diode, 1500W, 81V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1.5KE, 2 PIN

1N6295/4H Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionO-PALF-W2
Contacts2
Manufacturer packaging codeCASE 1.5KE
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage110 V
Minimum breakdown voltage90 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation6.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage81 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
Case Style 1.5KE
PRIMARY CHARACTERISTICS
V
BR
uni-directional
V
BR
bi-directional
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
6.8 V to 540 V
6.8 V to 440 V
1500 W
6.5 W
200 A
175 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types,
(e.g. 1.5KE440CA).
use
C
or
CA
suffix
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
Peak pulse current with a 10/1000 µs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 5)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Maximum instantaneous forward voltage at 100 A for uni-directional only
(3)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) V
F
= 3.5 V for 1.5KE220 (A) and below; V
F
= 5.0 V for 1.5KE250(A) and above
(2)
(1)
SYMBOL
(Fig. 1)
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
1500
See next table
6.5
200
3.5/5.0
- 55 to + 175
UNIT
W
A
W
A
V
°C
www.vishay.com
106
Document Number: 88301
Revision: 20-Sep-07

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