IRG4MC30FDPBF datasheet, PDF - EEWORLD Datasheet

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IRG4MC30FDPBF: DescriptionInsulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED, TO-254AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size141KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRG4MC30FDPBF Overview

Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED, TO-254AA, 3 PIN

IRG4MC30FDPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-254AA
package instruction	FLANGE MOUNT, S-MSFM-P3
Contacts	3
Reach Compliance Code	compliant
Shell connection	ISOLATED
Maximum collector current (IC)	28 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Base Number Matches	1

IRG4MC30FDPBF Related Products

	IRG4MC30FDPBF	IRG4MC30FD	IRG4MC30FUPBF	IRG4MC30FU
Description	Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED, TO-254AA, 3 PIN	Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED, TO-254AA, 3 PIN	Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED, TO-254AA, 3 PIN	Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED, TO-254AA, 3 PIN
Is it lead-free?	Lead free	Contains lead	Lead free	Contains lead
Is it Rohs certified?	conform to	incompatible	conform to	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-254AA	TO-254AA	TO-254AA	TO-254AA
package instruction	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Contacts	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	28 A	28 A	28 A	28 A
Collector-emitter maximum voltage	600 V	600 V	600 V	600 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
JESD-30 code	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	260	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	NOT SPECIFIED	40	NOT SPECIFIED
transistor applications	POWER CONTROL	POWER CONTROL	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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