|
FES3DTTRTB |
FES3DTHE3TRTB |
Description |
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
package instruction |
ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
R-PDSO-C2 |
Reach Compliance Code |
compliant |
compliant |
ECCN code |
EAR99 |
EAR99 |
Other features |
FREE WHEELING DIODE, LOW POWER LOSS |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS |
application |
EFFICIENCY |
EFFICIENCY |
Configuration |
SINGLE |
SINGLE |
Diode component materials |
SILICON |
SILICON |
Diode type |
RECTIFIER DIODE |
RECTIFIER DIODE |
Maximum forward voltage (VF) |
0.9 V |
0.9 V |
JEDEC-95 code |
DO-214AB |
DO-214AB |
JESD-30 code |
R-PDSO-C2 |
R-PDSO-C2 |
Maximum non-repetitive peak forward current |
100 A |
100 A |
Number of components |
1 |
1 |
Phase |
1 |
1 |
Number of terminals |
2 |
2 |
Maximum operating temperature |
175 °C |
175 °C |
Minimum operating temperature |
-55 °C |
-55 °C |
Maximum output current |
3 A |
3 A |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
Package form |
SMALL OUTLINE |
SMALL OUTLINE |
Guideline |
AEC-Q101 |
AEC-Q101 |
Maximum repetitive peak reverse voltage |
200 V |
200 V |
Maximum reverse current |
1 µA |
1 µA |
Maximum reverse recovery time |
0.035 µs |
0.035 µs |
surface mount |
YES |
YES |
Terminal form |
C BEND |
C BEND |
Terminal location |
DUAL |
DUAL |
Base Number Matches |
1 |
1 |